Winbond W83627DHG, Manual

Page: 235 / 268

W83627DHG
Publication Release Date: Aug, 22, 2007
-223- Version 1.4
DC CHARACTERISTICS, continued
PARAMETER SYM MIN TYP MAX. UNIT CONDITIONS
IN
cu
– CMOS-level input pin with internal pulled-up resistor
Input High Voltage V
IH
0.7
V
CC
V
Input High Leakage I
LIH
+10 μ A V
IN
= V
CC
= 3.3V
Input Low Leakage I
LIL
-10 μ A V
IN
= 0 V
IN
cs
– CMOS–level, Schmitt-trigger input pin
Input Low Threshold Voltage V
t-
1.3 1.5 1.7 V V
CC
= 3.3V
Hystersis V
TH
1.5 2 V V
CC
= 3.3V
Input High Leakage I
LIH
+10
μ
A V
IN
= 3.3V
Input Low Leakage I
LIL
-10 μ
A
V
IN
= 0 V
IN
csu
– CMOS–level, Schmitt-trigger input pin with internal pulled-up resistor
Input Low Threshold Voltage V
t-
0.5 0.8 1.1 V V
CC
= 3.3V
Input High Threshold Voltage V
t+
1.6 2.0 2.4 V V
CC
= 3.3V
Hystersis V
TH
0.5 1.2 V V
CC
= 3.3V
Input High Leakage I
LIH
+10
μ
A
V
IN
= 3.3V
Input Low Leakage I
LIL
-10
μ
A V
IN
= 0 V
AOUT – Analog output
N.A.
IN
B
V1S
B
– VID input pin for INTEL® VRM10.0, and VRM11 design
Input Low Voltage V
IL
0.4 V
Input High Voltage V
IH
0.6 V
IN
B
V2S
B
– VID input pin for AMD
TM
VRM design
Input Low Voltage V
IL
0.8 V
Input High Voltage V
IH
1.4 V