Rev. 2.00, 09/03, page 216 of 690
Figure 7.18 shows a timing chart for burst writes. In burst write, an ACTV command is output in
the Tr cycle, the WRIT command is issued in the Tc1, Tc2, and Tc3 cycles, and the WRITA
command is issued to execute an auto-precharge in the Tc4 cycle. In the write cycle, the write
data is output simultaneously with the write command. After the write command with the auto-
precharge is output, the Trw1 cycle that waits for the auto-precharge initiation is followed by the
Tap cycle that waits for completion of the auto-precharge induced by the WRITA command in the
SDRAM. In the Tap cycle, a new command will not be issued to the same bank. However, access
to another CS space or another bank in the same SDRAM space is enabled. The number of Trw1
cycles is specified by the TRWL[1:0] bits of the CS3WCR register. The number of Tap cycles is
specified by the TRP[1:0] bits of the CS3WCR register.
Tc4
CKIO
A25 to A0
CSn
RD/
WR
RASU
/
L
DQMxx
*
2
D31 to D0
BS
Tap
DACKn
*
3
Tr
Tc2
Tc3
Tc1
Trwl
A12/A11
*
1
CASU
/
L
Notes: 1. Address pin to be connected to the A10 pin of SDRAM.
2. xx is UU, UL, LU, or LL.
3. The waveform for DACKn is when active low is specified.
Figure 7.18 Basic Timing for Synchronous DRAM Burst Write (Auto Precharge)
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