LAPIS Semiconductor ML610472, User Manual

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ML610471/472/473/Q471/Q472/Q473 User's Manual
Appendix C Electrical Characteristics
Appendix C–2
●
Operating Conditions of Flash Memory
(V
SS
= 0V)
Parameter Symbol Condition Range Unit
Operating temperature T
OP
At write/erase 0
to
+40 °C
V
DD
At write/erase 2.75
to
3.6
V
DDL
At write/erase
*1
2.5
to
2.75 Operating voltage
V
PP
At write/erase 7.7
to
8.3
V
Rewrite count C
EP
― 80 cycles
Data retention Y
DR
― 10 years
*1
: When writing to and erasing on the flash Memory, the voltage in the specified range needs to be supplied to the V
DDL
pin.
The V
PP
pin has an internal pull-down resistor.
●
DC Characteristics (1/6)
(V
DD
=
1.25 to 3.6V, V
SS
=0V, Ta=
-20 to +70°C,
Ta=
-40 to +85°C for P version, unless otherwise specified)
Rating
Parameter Symbol Condition
Min. Typ. Max.
Unit
Measur
ement
circuit
Ta=25°C
Typ.
-10%
500
Typ.
+10%
kHz
500kHz RC oscillation
frequency
f
RC
V
DD
=1.25
to
3.6V
*
2
Typ.
-25%
500
Typ.
+25%
kHz
Low-speed crystal
oscillation start time*
1
T
XTL
― ― 0.6 2 s
500kHz RC oscillation start
time
T
RC
― ― ― 3 μ s
Reset pulse width P
RST
― 200 ― ―
Reset noise elimination
pulse width
P
NRST
― ― ― 0.3
μ s
Power-on reset generated
power rise time
T
POR
― ― ― 10 ms
1
*
1
: 32.768kHz crystal resonator DT-26 (Load capacitance 6pF) (made by KDS:DAISHINKU CORP.) is used (C
GL
=C
DL
=6pF).
*
2
: Recommended operating temperature (Ta=-20 to 70°C, Ta=-40 to 85°C for P version)
●
Reset
RESET_N
RESET_N pin reset
V
DD
0.9
×
V
DD
0.1
×
V
DD
T
POR
Power on reset
P
RST
VIL1 VIL1