MB95630H Series
548
FUJITSU SEMICONDUCTOR LIMITED
MN702-00009-1v0-E
CHAPTER 25 DUAL OPERATION FLASH MEMORY
25.5 Programming/Erasing Flash Memory
Figure 25.5-1 Sample Procedure for Programming to Flash Memory
S
t
a
rt of progr
a
mming
Re
a
d intern
a
l
a
ddre
ss
.
Progr
a
mming comm
a
nd
s
e
qu
ence
(1) 0xUAAA
←
0xAA
(2) 0xU554
←
0x55
(
3
) 0xUAAA
←
0xA0
(4) Progr
a
m
a
ddre
ss
←
Progr
a
m d
a
t
a
Next
a
ddre
ss
Re
a
d intern
a
l
a
ddre
ss
.
D
a
t
a
polling
(DQ7)
D
a
t
a
polling
(DQ7)
D
a
t
a
D
a
t
a
Exec
u
tion timeo
u
t
(DQ5)
1
End of progr
a
mming
0
L
as
t
a
ddre
ss
?
YE
S
NO
Progr
a
m error
D
a
t
a
D
a
t
a
F
S
R:WRE
En
ab
le Fl
as
h memory progr
a
mming.
S
WRE0
En
ab
le/di
sab
le progr
a
mming d
a
t
a
to
a
s
ector.
(Write "0" to di
sab
le progr
a
mming d
a
t
a
or “1” to en
ab
le
progr
a
mming d
a
t
a
to
a
s
ector.)
F
S
R:WRE
Di
sab
le Fl
as
h memory progr
a
mming.