Preliminary
MOBILE DRAM CONTROLLER
S3C2451X RISC MICROPROCESSOR
6-10
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
MOBILE DRAM CONTROL REGISTER
Register Address
R/W
Description
Reset
Value
BANKCON1
0x48000004
R/W
Mobile DRAM control register
0x4400_0040
BANKCON Bit
Description
Initial
State
BUSY [31]
DRAM controller status bit (read only)
0 = IDLE
1 = BUSY
0b
DQSInDLL
*
[30:28]
DQSIn Delay selection
Should be set ‘3’
100b
Reserved
[27:26] Should be ‘1’
01b
Reserved
[25:8]
Should be ‘1’
0
BStop [7]
Read Burst stop control
0= not support Read Burst Stop
1= support Read Burst Stop
Note: This function is only valid in mDDR interface.
0b
WBUF [6]
Write buffer control
0 = Disable
1 = Enable
note:
Disabling the write buffer will flush any stored values to the
external DRAM memory.
1b
AP [5]
Auto pre-charge control
0 = Enable auto pre-charge
1 = Disable auto pre-charge
Note: If PWRDN is enabled, then AP=0 provides pre-charge
power down and AP=1 provides active power down.
0b
PWRDN [4]
0 = not support DRAM power down control
1 = support DRAM power down control
0b
Reserved [3:2]
Reserved
00b
INIT [1:0]
DRAM initialization control
00 = Normal operation
01 = Issue PALL command
10 = Issue MRS command
11 = Issue EMRS command
00b