![Samsung S3C2451X Скачать руководство пользователя страница 753](http://html.mh-extra.com/html/samsung/s3c2451x/s3c2451x_user-manual_340826753.webp)
Preliminary
S3C2451X RISC MICROPROCESSOR
ELECTRICAL DATA
29-29
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
Table 29-25. USB Full Speed Output Buffer Electrical Characteristics
(VDDi= 1.3V
±
0.05V (400MHz), VDDi= TBD V
±
0.05V (533MHz), TA = -40 to 85
°
C, VDDA33x = 3.3V
±
0.3V)
Parameter Symbol Condition Min
Max
Unit
Driver Characteristics
Transition Time
Rise Time
Fall Time
TR
TF
CL = 50pF
CL = 50pF
4.0
4.0
20
20
ns
Rise/Fall Time Matching
TRFM
(TR / TF )
90
110
%
Output Signal Crossover
Voltage
VCRS
1.3
2.0
V
Drive Output Resistance
ZDRV
Steady state drive
28
43
ohm
Table 29-26. USB High Speed Output Buffer Electrical Characteristics
(VDDi= 1.3V
±
0.05V (400MHz), VDDi= TBD V
±
0.05V (533MHz), TA = -40 to 85
°
C, VDDA33x = 3.3V
±
0.3V)
Parameter Symbol Condition Min
Max
Unit
Driver Characteristics
Transition Time
Rising Time
Falling Time
TR
TF
500
500
ps
ps
Drive Output Resistance
ZDRV
Steady state drive
40.5
49.5
ohm
Table 29-27. High Speed SDMMC Interface Transmit/Receive Timing Constants
(VDDi= 1.3V
±
0.05V (400MHz), VDDi= TBD V
±
0.05V (533MHz), TA = -40 to 85
°
C, VDD_SD = 3.3V
±
0.3V)
Parameter Symbol
Min
Typ.
Max
Unit
SD Command output Delay time
t
SDCD
0.4 – 6.8 ns
SD Command input Setup time
t
SDCS
12.2 –
– ns
SD Command input Hold time
t
SDCH
- – 0.1
ns
SD Data output Delay time
t
SDDD
0.4 – 6.6 ns
SD Data input Setup time
t
SDDS
12.3 –
– ns
SD Data input Hold time
t
SDDH
- – 0.1
ns