Preliminary
S3C2451X RISC MICROPROCESSOR
ELECTRICAL DATA
29-5
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
Table 29-4. Special Memory DDR I/O PAD DC Electrical Characteristics
Symbol Parameter
Min
Typ
Max
Unit
Note
VDD_
sdram
Output supply voltage
1.70
1.8
1.90
V
400MHz 1.3(TBD)
V
VDDi
Internal Core Voltage
533MHz TBD
Temp Ambient
Temperature
-40
25
85
°
C
Vih
dc Input Logic High
0.8*VDD
sdram
- -
V
Vil
dc Input Logic Low
-
-
0.2*VDD
sdram
V
Iih
High Level Input Current
-10
-
10
uA
Iil
Low Level Input Current
-10
-
10
uA
Iih
High Level Input Current (with Pull
Down)
20 - 60
uA
Iil
Low Level Input Current (with Pull Up)
-60
-
-20
uA
Voh
Output High Voltage(@Ioh=-100uA)
VDDsdram
-0.2
- -
V
Vol
Output Low Voltage(@Iol=100uA)
-
-
0.2
V
Table 29-5. USB DC Electrical Characteristics
Symbol Parameter
Condition Min Max
Unit
VIH
High level input voltage
2.5
V
VIL
Low level input voltage
0.8
V
IIH
High level input current
Vin = 3.3V
-10
10
μ
A
IIL
Low level input current
Vin = 0.0V
-10
10
μ
A
VOH
Static Output High
15K
to GND
2.8 3.6
V
VOL
Static Output Low
1.5K
to 3.6V
0.3
V
Table 29-6. RTC OSC DC Electrical Characteristics
Symbol Parameter
Min
Typ
Max
Unit
VDD_RTC
Output supply voltage
2.5
3.0
3.6
V
V
IH
DC input logic high
0.8*VDDrtc
V
V
IL
DC input logic low
0.2*VDDrtc
V
IIH
High level input current
-10
10
μ
A
IIL
Low level input current
-10
10
μ
A