Preliminary
MOBILE DRAM CONTROLLER
S3C2451X RISC MICROPROCESSOR
6-12
Preliminary product information describe products that are in development,
for which full characterization data and associated errata are not yet available.
Specifications and information herein are subject to change without notice.
MOBILE DRAM (EXTENDED ) MODE REGISTER SET REGISTER
Register Address
R/W
Description
Reset
Value
BANKCON3 0x4800000C R/W
Mobile
DRAM (E)MRS Register
0x8000_0003
1) mSDRAM / mDDR
PnBANKCON Bit
Description
Initial
State
BA
[31:30] Bank address for EMRS
10b
Reserved
[29:23] Should be ‘0’
0000000b
DS [22:21]
DS(Driver
Strength) for EMRS
00b
Reserved
[20:19] Should be ‘0’
00b
PASR [18:16]
PASR(Partial
Array
Self Refresh) for EMRS
000b
BA
[15:14] Bank address for MRS
0b
Reserved
[15:7]
Should be ‘0’
000000000b
CAS Latency
[6:4]
CAS Latency for MRS
00 = Reserved 01 = 1-clock
10 = 2-clock
11 = 3-clock
000b
Burst Type
[3]
DRAM Burst Type (Read Only)
Only support sequential burst type.
0b
Burst Length
[2:0]
DRAM Burst Length (Read Only)
This value is determined internally.
011b
Note: Bit[15:0] is used for MRS command cycle, and Bit[31:16] is for EMRS command cycle. You can program
this register as memory type you are using. Each 16-bit exactly map the (E)MRS register bit location. Refer to
memory data sheet.