System Manual
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For an ICP 65 the process operating ranges are:
Total gas flows
= 10 to 1000sccm. The maximum flow depends on type of pump, i.e. its maximum flow
capacity, and the required operating pressure. If you need to use a low pressure, you may have to limit
the flow rate to achieve this.
Pressure
= 10 to 1000mTorr. The system base pressure is measured simply by using the CM gauge, hence
base pressures are typically a few mTorr. The exact value is mainly determined by the offset of the CM
gauge zero (this is usually set slightly positive by a few mTorr to ensure a sensible reading, since a
negative offset will always read zero).
ICP power
= approximately 50W to 250W. The minimum power level will be dependent on how easily
the plasma strikes for certain gases. You will need to check this and adjust process accordingly, since
operating system without a plasma either on the substrate electrode or in the ICP tube could cause
damage.
The maximum ICP power limit is set by the power rating of the RF generator.
Temperature
is limited by the operating range of the electrode.
NOTES:
(A)
The time taken to reach the base pressure will depend on whether the chamber has recently been
vented to atmosphere and the cleanliness of the chamber walls. If the process chamber /
electrodes are anodised, the time will increase as the anodised surfaces will take longer to outgas
compared with bare metal surfaces.
(B)
Operating with chlorine based processes can cause damage to the electrode unless it is protected
with a dummy wafer.
(C)
Operating with a high-reflected power (>5% of forward power) is not advised, as this will cause
damage to the matching unit or RF generator. To reduce the high-reflected power, adjust the
process parameters or re-tune the matching unit.
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Gases with a low vapour pressure (e.g. TEMAH) present unique problems for the gas supply system, e.g.
temperature dependence of gas pressure, condensation in the gas lines, and low line pressure. It is
recommended that delivery lines are always heated above the condensation temperature and the lines
are always > 20 C higher than the source pot temperature.
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See the MKS OEM manual for details of gas correction factors. However, it is worth pointing out that for
certain gases (e.g. H2 or He) it is recommended that the MFC is calibrated for that particular gas, since
they have very different gas properties compared to other gases, and hence the errors on calibrations
factors is large.
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The by-products emitted by an ALD process will be mostly made up of the inert gases, methyl, ethyl and
ammonia like by-products. The exact amounts will depend on process type and conditions. These can be
any combination of etch gas material and etched material.
Process Information
(Information contained in this document is confidential)
Printed: 08 October 2007 11:00
Page 7 of 14
Issue 1: August 07
Summary of Contents for OpAL
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