Terasic De0-Nano, User Manual

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DRAM_ADDR[12] PIN_L4 SDRAM Address[12] 3.3V
DRAM_DQ[0] PIN_G2 SDRAM Data[0] 3.3V
DRAM_DQ[1] PIN_G1 SDRAM Data[1] 3.3V
DRAM_DQ[2] PIN_L8 SDRAM Data[2] 3.3V
DRAM_DQ[3] PIN_K5 SDRAM Data[3] 3.3V
DRAM_DQ[4] PIN_K2 SDRAM Data[4] 3.3V
DRAM_DQ[5] PIN_J2 SDRAM Data[5] 3.3V
DRAM_DQ[6] PIN_J1 SDRAM Data[6] 3.3V
DRAM_DQ[7] PIN_R7 SDRAM Data[7] 3.3V
DRAM_DQ[8] PIN_T4 SDRAM Data[8] 3.3V
DRAM_DQ[9] PIN_T2 SDRAM Data[9] 3.3V
DRAM_DQ[10] PIN_T3 SDRAM Data[10] 3.3V
DRAM_DQ[11] PIN_R3 SDRAM Data[11] 3.3V
DRAM_DQ[12] PIN_R5 SDRAM Data[12] 3.3V
DRAM_DQ[13] PIN_P3 SDRAM Data[13] 3.3V
DRAM_DQ[14] PIN_N3 SDRAM Data[14] 3.3V
DRAM_DQ[15] PIN_K1 SDRAM Data[15] 3.3V
DRAM_BA[0] PIN_M7 SDRAM Bank Address[0] 3.3V
DRAM_BA[1] PIN_M6 SDRAM Bank Address[1] 3.3V
DRAM_DQM[0] PIN_R6 SDRAM byte Data Mask[0] 3.3V
DRAM_DQM[1] PIN_T5 SDRAM byte Data Mask[1] 3.3V
DRAM_RAS_N PIN_L2 SDRAM Row Address Strobe 3.3V
DRAM_CAS_N PIN_L1 SDRAM Column Address Strobe 3.3V
DRAM_CKE PIN_L7 SDRAM Clock Enable 3.3V
DRAM_CLK PIN_R4 SDRAM Clock 3.3V
DRAM_WE_N PIN_C2 SDRAM Write Enable 3.3V
DRAM_CS_N PIN_P6 SDRAM Chip Select 3.3V
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The DE0-Nano contains a 2Kbit Electrically Erasable PROM (EEPROM). The EEPROM is
configured through a 2-wire I2C serial interface. The device is organized as one block of 256 x 8-bit
memory. The I2C write and read address are 0xA0 and 0xA1, respectively.
Figure 3-7 illustrates its
connections with the Cyclone IV FPGA.