31 ELECTRICAL CHARACTERISTICS
31-10
Seiko Epson Corporation
S1C33L26 TECHNICAL MANUAL
SDRAM self-refresh cycle
SDCLK
SDCKE
SDBA[1:0]
SDA[12:11]
SDA[9:0]
SDA10
#SDCS
#SDRAS
#SDCAS
#SDWE
D[15:0]
DQMH/
DQML
t
CSD
t
CSH
t
WED
Exit self refresh mode
Enter self refresh mode
t
RASD
t
CASD
t
CKED
*
A precharge cycle is necessary before entering the self refresh mode.
Normal mode (SDCLK = MCLK, 60MHz Max.)
Unless otherwise specified: LV
DD
= 1.65 to 1.95V, HV
DD
= 2.7 to 3.6V, V
SS
= 0V, Ta = -40 to 85°C
External load conditions: Address bus/data bus = 50pF, SDCLK/control signals = 20pF
SDRAM: Setup time = 3.5ns, Hold time = 1ns, Access time = 6.5ns max.
Item
Symbol
Min.
Typ.
Max.
Unit
Address delay time
t
AD
–
–
12.1
ns
Address hold time
t
AH
1.3
–
–
ns
SDA10 signal delay time
t
A10D
–
–
12.1
ns
SDA10 signal hold time
t
A10H
1.3
–
–
ns
#SDCS signal delay time
t
CSD
–
–
12.1
ns
#SDCS signal hold time
t
CSH
1.3
–
–
ns
#SDRAS signal delay time
t
RASD
–
–
12.1
ns
#SDRAS signal hold time
t
RASH
1.3
–
–
ns
#SDCAS signal delay time
t
CASD
–
–
12.1
ns
#SDCAS signal hold time
t
CASH
1.3
–
–
ns
DQMH, DQML signal delay time
t
DQMD
–
–
12.1
ns
DQMH, DQML signal hold time
t
DQMH
1.3
–
–
ns
SDCKE signal delay time
t
CKED
–
–
12.1
ns
SDCKE signal hold time
t
CKEH
1.3
–
–
ns
#SDWE signal delay time
t
WED
–
–
12.1
ns
#SDWE signal hold time
t
WEH
1.3
–
–
ns
Read data setup time
t
RDS
6.3
–
–
ns
Read data hold time
t
RDH
0
–
–
ns
Write data delay time
t
WDD
–
–
12.1
ns
Write data hold time
t
WDH
1.3
–
–
ns