31 ELECTRICAL CHARACTERISTICS
31-2
Seiko Epson Corporation
S1C33L26 TECHNICAL MANUAL
DC Characteristics
31.3
HV
DD
= AV
DD
= 3.0 to 3.6 V
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Input leakage current
I
LI
HV
DD
= 3.6V, LV
DD
= 1.95V,
HV
IN
= HV
DD
, LV
IN
= LV
DD
,
V
IL
= 0V
-5
–
5
µA
Off-state leakage current
I
OZ
HV
DD
= 3.6V, LV
DD
= 1.95V,
HV
IN
= HV
DD
, LV
IN
= LV
DD
,
V
IL
= 0V
-5
–
5
µA
HV
DD
, AV
DD
system I/O
High level output voltage (TYPE1)
V
OH1H
HV
DD
= 3.0V, I
OH
= -2mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE1)
V
OL1H
HV
DD
= 3.0V, I
OL
= 2mA
–
–
0.4
V
High level output voltage (TYPE2)
V
OH2H
HV
DD
= 3.0V, I
OH
= -4mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE2)
V
OL2H
HV
DD
= 3.0V, I
OL
= 4mA
–
–
0.4
V
High level output voltage (TYPE3)
V
OH3H
HV
DD
= 3.0V, I
OH
= -8mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE3)
V
OL3H
HV
DD
= 3.0V, I
OL
= 8mA
–
–
0.4
V
High level input voltage (LVTTL)
V
IH1H
HV
DD
= 3.6V
2
–
HV
DD
+ 0.3
V
Low level input voltage (LVTTL)
V
IL1H
HV
DD
= 3.0V
-0.3
–
0.8
V
High level input voltage (LVCMOS)
V
IH2H
HV
DD
= 3.6V
2.2
–
HV
DD
+ 0.3
V
Low level input voltage (LVCMOS)
V
IL2H
HV
DD
= 3.0V
–
–
0.8
V
Positive trigger input voltage (LVCMOS Schmitt) V
T1+
HV
DD
= 3.6V, LV
DD
= 1.95V
1.4
–
2.7
V
Negative trigger input voltage (LVCMOS Schmitt) V
T1-
HV
DD
= 3.0V, LV
DD
= 1.65V
0.6
–
1.8
V
Hysteresis voltage (LVCMOS Schmitt)
D
V
1
HV
DD
= 3.0V, LV
DD
= 1.65V
0.3
–
–
V
Pull-up resistor (TYPE1)
R
PLU1H
V
I
= 0V
25
50
120
k
W
Pull-down resistor (TYPE1)
R
PLD1H
V
I
= HV
DD
25
50
120
k
W
Pull-up resistor (TYPE2)
R
PLU2H
V
I
= 0V
50
100
240
k
W
Pull-down resistor (TYPE2)
R
PLD2H
V
I
= HV
DD
50
100
240
k
W
High level holding current (Bus hold latch)
HI
BHH
HV
DD
= 3.0V, V
I
= 2.0V
–
–
-20
µA
Low level holding current (Bus hold latch)
HI
BHL
HV
DD
= 3.0V, V
I
= 0.8V
–
–
17
µA
High level inverting current (Bus hold latch)
HI
BHH0
HV
DD
= 3.6V, V
I
= 0.8V
-350
–
–
µA
Low level inverting current (Bus hold latch)
HI
BHL0
HV
DD
= 3.6V, V
I
= 2.0V
300
–
–
µA
LV
DD
, RTCV
DD
system I/O
High level output voltage (TYPE1)
V
OH1L
LV
DD
= 1.65V, I
OH
= -1mA
LV
DD
- 0.4
–
–
V
Low level output voltage (TYPE1)
V
OL1L
LV
DD
= 1.65V, I
OL
= 1mA
–
–
0.4
V
High level input voltage (LVCMOS)
V
IH1L
LV
DD
= 1.95V
1.27
–
LV
DD
+ 0.3
V
Low level input voltage (LVCMOS)
V
IL1L
LV
DD
= 1.65V
-0.3
–
0.57
V
Positive trigger input voltage (LVCMOS Schmitt) V
T2+
HV
DD
= 3.6V, LV
DD
= 1.95V
0.6
–
1.4
V
Negative trigger input voltage (LVCMOS Schmitt) V
T2-
HV
DD
= 3.0V, LV
DD
= 1.65V
0.3
–
1.1
V
Hysteresis voltage (LVCMOS Schmitt)
D
V
2
HV
DD
= 3.0V, LV
DD
= 1.65V
0.02
–
–
V
Pull-down resistor (TYPE2)
R
PLD2L
V
I
= LV
DD
48
120
300
k
W
Input pin capacitance
C
I
f = 1MHz, HV
DD
= 0V
–
–
8
pF
Output pin capacitance
C
O
f = 1MHz, HV
DD
= 0V
–
–
8
pF
I/O pin capacitance
C
IO
f = 1MHz, HV
DD
= 0V
–
–
8
pF
HV
DD
= AV
DD
= 2.7 to 3.6 V
Item
Symbol
Condition
Min.
Typ.
Max.
Unit
Input leakage current
I
LI
HV
DD
= 3.6V, LV
DD
= 1.95V,
HV
IN
= HV
DD
, LV
IN
= LV
DD
,
V
IL
= 0V
-5
–
5
µA
Off-state leakage current
I
OZ
HV
DD
= 3.6V, LV
DD
= 1.95V,
HV
IN
= HV
DD
, LV
IN
= LV
DD
,
V
IL
= 0V
-5
–
5
µA
HV
DD
, AV
DD
system I/O
High level output voltage (TYPE1)
V
OH1H
HV
DD
= 2.7V, I
OH
= -1.8mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE1)
V
OL1H
HV
DD
= 2.7V, I
OL
= 1.8mA
–
–
0.4
V
High level output voltage (TYPE2)
V
OH2H
HV
DD
= 2.7V, I
OH
= -3.6mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE2)
V
OL2H
HV
DD
= 2.7V, I
OL
= 3.6mA
–
–
0.4
V
High level output voltage (TYPE3)
V
OH3H
HV
DD
= 2.7V, I
OH
= -7.2mA
HV
DD
- 0.4
–
–
V
Low level output voltage (TYPE3)
V
OL3H
HV
DD
= 2.7V, I
OL
= 7.2mA
–
–
0.4
V
High level input voltage (LVTTL)
V
IH1H
HV
DD
= 3.6V
2
–
HV
DD
+ 0.3
V
Low level input voltage (LVTTL)
V
IL1H
HV
DD
= 2.7V
-0.3
–
0.7
V
High level input voltage (LVCMOS)
V
IH2H
HV
DD
= 3.6V
2.2
–
HV
DD
+ 0.3
V
Low level input voltage (LVCMOS)
V
IL2H
HV
DD
= 2.7V
–
–
0.7
V
Positive trigger input voltage (LVCMOS Schmitt) V
T1+
HV
DD
= 3.6V, LV
DD
= 1.95V
1.4
–
2.7
V