6-2
Specifications
Table 6.1
Absolute Maximum Stress Ratings
Symbol
Parameter
Min
Max
1
1. Stresses beyond those listed above may cause permanent damage to the device. These are stress
ratings only; functional operation of the device at these or any other conditions beyond those
indicated in the
section of the manual is not implied.
Unit
Test Conditions
T
STG
Storage temperature
−
55
150
°
C
–
V
DD
Supply voltage
−
0.5
4.5
V
–
V
IN
Input voltage
−
0.3
5.55
V
–
V
IN-PCI
Input voltage PCI pins
−
5.5
11.0
V
–
I
LP
2
2.
−
2 V < VPIN < 8 V.
Latch-up current
±
150
–
mA
–
T
Lead temperature
–
250
°
C
<10 seconds
ESD
3
3. SCSI pins only.
Electrostatic discharge
–
2 K
V
MIL-STD 883C,
Method 3015.7
Table 6.2
Operating Conditions
Symbol
Parameter
Min
Max
1
1. Conditions that exceed the operating limits may cause the device to function incorrectly.
Core and analog supply only.
Unit
Test Conditions
V
DD
Supply voltage
3.13
3.47
V
–
I
DD
Supply current (dynamic)
2
–
800
mA
–
I
DD-SCSI
LVD Mode Supply Current
(dynamic)
–
1
A
–
T
A
Operating free air
0
70
°
C
–
θ
JA
Thermal resistance
(junction to ambient air)
–
20
°
C/W
–
Содержание LSI53C1000
Страница 6: ...vi Preface...
Страница 16: ...xvi Contents...
Страница 28: ...1 12 Introduction...
Страница 234: ...4 124 Registers...
Страница 314: ...6 40 Specifications This page intentionally left blank...
Страница 318: ...6 44 Specifications This page intentionally left blank...
Страница 344: ...6 70 Specifications This page intentionally left blank...
Страница 350: ...6 76 Specifications Figure 6 42 LSI53C1000 329 Ball Grid Array Bottom view...
Страница 352: ...6 78 Specifications...
Страница 360: ...A 8 Register Summary...
Страница 376: ...IX 12 Index...