B-4
External Memory Interface Diagram Examples
Figure B.4
512 Kbyte Interface with 150 ns Memory
LSI53C1000
MOE/
D[7:0]
8
MAD[7:0]
Bus
CK
Q[7:0]
8
A[7:0]
QE
D[7:0]
CK
Q[7:0]
QE
8
A[15:8]
8
V
DD
MAS0/
MAS1/
8
Note: MAD2 pulled LOW internally. MAD bus sense logic enabled for 512 Kbytes of slow memory (150 ns
devices, additional time required for HCT139 @ 66 MHz). The HCT374s may be replaced with HCT377s.
HCT374
HCT374
GPIO4
MWE/
VPP
Control
+ 12 V
VPP
Optional - for Flash Memory only, not
required for EEPROMS.
D[7:0]
MAD3
4.7 K
D[2:0]
CK
Q0
Q2
3
HCT377
MAD[2:0]
Bus
E
MAD1
4.7 K
MAD3
4.7 K
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
OE
WE
D[7:0]
A0
A16
.
.
.
A
B
GB
Y0
Y1
Y2
Y3
MCE/
HCT139
CE
CE
CE
CE
27C010-15/28F010-15 Sockets
Содержание LSI53C1000
Страница 6: ...vi Preface...
Страница 16: ...xvi Contents...
Страница 28: ...1 12 Introduction...
Страница 234: ...4 124 Registers...
Страница 314: ...6 40 Specifications This page intentionally left blank...
Страница 318: ...6 44 Specifications This page intentionally left blank...
Страница 344: ...6 70 Specifications This page intentionally left blank...
Страница 350: ...6 76 Specifications Figure 6 42 LSI53C1000 329 Ball Grid Array Bottom view...
Страница 352: ...6 78 Specifications...
Страница 360: ...A 8 Register Summary...
Страница 376: ...IX 12 Index...