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OpAL
Oxford Instruments Plasma Technology
System Manual
3.7.1
Upper chamber configuration for plasma ALD
The upper chamber configuration for ALD is shown in Fig 3-23 (based on drawing G-
MA71A30690).
This configuration comprises the following major components:
Automatic Matching Unit (AMU) – matches the impedance from the RF generator to the
ICP 65 ion source to ensure maximum power transfer.
ICP 65 ion source. – produces a plasma for the process chamber.
Fast gate valve – when required, isolates the ICP 65 ion source from the process chamber.
The valve is heated by a heater jacket.
Process chamber top – forms the upper half of the process chamber and when lowered
onto the lower chamber provides a vacuum-tight process chamber. Sealing is provided by
integral O rings. Apertures are provided for the following:
Plasma head – ICP 65.
Two blanked view ports – each can be used as a view port or to mount an end point
detection device.
Process gas line inlet.
Purge gas line inlet.
Description
Issue 1: August 07
Page 3-26 of 46
Printed: 07 August 2009 07:42
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