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6.7. Electron beam deposition or etching (with GIS upgrade only)
Requires a gas injection system (GIS).
Depositing and etching with the electron beam is a suitable method for materials that cannot be
pro-cessed with the focused ion beam, e.g. quartz masks.
Another advantage is, that there is no impairment of surfaces (i.e. no generation of amorphous
layers).
Precursor/gas
Application
Insulator, SiO
2
Deposition
Platinum, Pt
Deposition
Water
(reactive products)
Etching of material that contains carbon e.g. diamond like carbon layers (DLC)
Fluorine, XeF
2
Etching of Si-containing materials
Tungsten, W
Deposition
Carbon, C
Deposition
Iodine, I
Etching of Al
Summary of Contents for Crossbeam 340
Page 1: ...Crossbeam 340 Crossbeam workstation Instruction Manual ...
Page 24: ...OQ çÑ NPQ fåëíêìÅíáçå j åì ä êçëëÄÉ ã PQM ÉåMOE loF OK p ÑÉíó p ÑÉíó ÉèìáéãÉåí ...
Page 60: ...SM çÑ NPQ fåëíêìÅíáçå j åì ä êçëëÄÉ ã PQM ÉåMOE loF RK fåëí ää íáçå ...
Page 120: ...NOM çÑ NPQ fåëíêìÅíáçå j åì ä êçëëÄÉ ã PQM ÉåMOE loF UK qêçìÄäÉëÜççíáåÖ mçïÉê ÅáêÅìáí ...
Page 126: ...NOS çÑ NPQ fåëíêìÅíáçå j åì ä êçëëÄÉ ã PQM ÉåMOE loF NNK ÄÄêÉîá íáçåë ...
Page 130: ...NPM çÑ NPQ fåëíêìÅíáçå j åì ä êçëëÄÉ ã PQM ÉåMOE loF NPK aÉÅä ê íáçå çÑ ÅçåÑçêãáíó ...
Page 133: ......