RF Power Supply and Matching Box
2. Overview
3
2. Overview
This chapter describes the system's features, configuration, and specifications.
2-1. Introduction
This system has been designed for plasma generation in RF sputtering, plasma CVD, etching, and other
plasma processing applications. This system combines an RF power supply and matching box. It can
continuously output its rated power at a single frequency of 13.56/27.12 MHz for high frequency loads. This
system also has a control terminal that makes external control by a PLC possible.
2-2. Features
The solid-state design eliminates consumables with short life-spans like vacuum tubes and has
increased reliability.
A stabilized oscillation frequency can be obtained by quartz crystal oscillation.
Reduced size and weight have improved maintainability significantly.
Accurate power can be read by the linearized power meter.
Built-in power factor modification circuit improved efficiency significantly.
The matching box allows you to freely select manual or auto mode.