20 eleCTRiCal ChaRaCTeRiSTiCS
S1C17153 TeChniCal Manual
Seiko epson Corporation
20-3
(Rev. 1.0)
Oscillation Characteristics
20.4
Oscillation characteristics change depending on conditions (board pattern, components used, etc.). Use the follow-
ing characteristics as reference values.
OSC1a crystal oscillation
Unless otherwise specified: V
DD
= 2.0 to 3.6V, V
SS
= 0V, Ta = 25°C, C
G
= built-in, C
D
= built-in, R
f
= built-in, R
D
= built-in
item
Symbol
Condition
Min.
Typ.
Max.
unit
Oscillation start time
*
1
t
sta
–
–
3
ms
Built-in gate capacitance
C
G
–
12
–
pF
Built-in drain capacitance
C
D
–
6
–
pF
*
1 Crystal resonator = C-002RX: manufactured by SEIKO EPSON (R
1
= 50k
W
Max., C
L
= 7pF)
OSC3B oscillation
Unless otherwise specified: V
DD
= 2.0 to 3.6V, V
SS
= 0V, Ta = 25
°
C
item
Symbol
Condition
Min.
Typ.
Max.
unit
Oscillation start time
t
sta
–
–
5.0
µs
Oscillation frequency
*
1
f
OSC3B
OSC3BFSEL[1:0] = 0x0 (2MHz)
Typ.
×
0.70
1.936
Typ.
×
1.30
MHz
OSC3BFSEL[1:0] = 0x1 (1MHz)
1.002
MHz
OSC3BFSEL[1:0] = 0x2 (500kHz)
0.511
MHz
Dependence of oscillation frequency on
temperature
*
1
Tf
OSC3B
OSC3BFSEL[1:0] = 0x0–0x2,
Frequency accuracy per
±
1°C change in
temperature (with reference to 25°C)
–
0.05
0.07
%/°C
*
1 Reference value
external Clock input Characteristics
20.5
EXCL
x
t
ECH
t
ECL
t
CF
t
CR
V
IH
V
IL
SCLK
x
t
CF
t
CR
V
IH
V
IL
Unless otherwise specified: V
DD
= 2.0 to 3.6V, V
SS
= 0V, V
IH
= 0.8V
DD
, V
IL
= 0.2V
DD
, Ta = -40 to 85°C
item
Symbol
Min.
Typ.
Max.
unit
EXCL
x
input High pulse width
t
ECH
60
–
–
ns
EXCL
x
input Low pulse width
t
ECL
60
–
–
ns
UART transfer rate
R
U
–
–
230400
bps
UART transfer rate (IrDA mode)
R
UIrDA
–
–
115200
bps
Input rise time
t
CR
–
–
80
ns
Input fall time
t
CF
–
–
80
ns
input/Output Pin Characteristics
20.6
Unless otherwise specified: V
DD
= 2.0 to 3.6V, V
SS
= 0V, Ta = -40 to 85
°
C
item
Symbol
Condition
Min.
Typ.
Max.
unit
High level Schmitt input threshold voltage
V
T+
P
xx
, #RESET
0.5V
DD
–
0.9V
DD
V
Low level Schmitt input threshold voltage
V
T-
P
xx
, #RESET
0.1V
DD
–
0.5V
DD
V
Hysteresis voltage
D
V
T
P
xx
, #RESET
0.1V
DD
–
–
V
High level output current
I
OH
P
xx
, V
OH
= 0.9V
DD
–
–
-0.5
mA
Low level output current
I
OL
P
xx
, V
OL
= 0.1V
DD
0.5
–
–
mA
Leakage current
I
LEAK
P
xx
, #RESET
-100
–
100
nA
Input pull-up resistance
R
IN
P
xx
, #RESET
100
–
500
k
W
Pin capacitance
C
IN
P
xx
, V
IN
= 0V, f = 1MHz, Ta = 25°C
–
–
15
pF
Reset low pulse width
t
SR
V
IH
= 0.8V
DD
, V
IL
= 0.2V
DD
100
–
–
µs
Operating power voltage
V
SR
2.0
–
–
V
#RESET power-on reset time
t
PSR
1.0
–
–
ms
