LSDRV/LS2DRV Electrical Specifications
MC9S12VRP Family Reference Manual Rev. 1.3
520
NXP Semiconductors
Appendix F
LSDRV/LS2DRV Electrical Specifications
This section provides electrical parametric and ratings for the LSDRV and the LS2DRV.
F.1
LSDRV Static Characteristics
Table F-1. Static Characteristics - LSDRV (LS0 and LS1)
Characteristics noted under conditions -40°C
T
J
150°C unless otherwise noted. Typical values reflect the approximate
parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Num
Ratings
Symbol
Min
Typ
Max
Unit
1
VSUP range for LSDRV compliant electrical characteristics
V
SUP
6
12
18
V
2
VSUP range within which the device is working without
LSDRV compliant electrical characteristics
V
SUP
3.5 to 6
and
18 to 27
V
3
Output Drain-to-Source On Resistance
T
J
= 25°C, I
PLS0/1
= 150 mA
T
J
= 150°C, I
PLS0/1
= 150 mA
R
DS(ON)
–
–
2.3
–
–
4.5
4a
Output Over-Current Threshold
The threshold is valid for each LS-driver output.
Note: The low-side driver is NOT intended to switch
capacitive loads. A significant capacitive load on
LS0/1 would induce a current when the low-side
driver gate is turned on. This current will be sensed
by the over-current circuitry and eventually lead to
an immediate over-current shut down.
I
LIMLSX
190
300
425
mA
4b
Output Over-Current De-assertion Threshold
The threshold is valid for each LS-driver output.
I
LIMDLSX
150
265
390
mA
5
Nominal Current for continuous operation.
This value is valid for each LS-driver output.
I
NOMLSX
–
–
180
mA
6
Settling time after the low-side driver is enabled (write LSEx
Bits)
t
LS_settling
1
–
s
7
High-Load Resistance Open-Load Detection Current
(if low-side driver is enabled and gate turned off)
I
HLROLDC
30
40
50
A
8
Leakage Current -40°C < T
J
< 80°C
Open Load Detection disabled.
I
LEAK_L
–
–
1
A
9
Leakage Current -40°C < T
J
< 150°C
Open Load Detection disabled.
I
LEAK_H
–
–
10
A
10
Active Output Voltage Clamp (I
PLS0/1
= 150 mA)
V
CLAMP
40
44
–
V
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