NXP Semiconductors MC9S12VRP64, Owner Reference Manual

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64 KByte Flash Module (S12FTMRG64K4KV2)
MC9S12VRP Family Reference Manual Rev. 1.3
472 NXP Semiconductors
Upon clearing CCIF to launch the Erase Verify P-Flash Section command, the Memory Controller will
verify the selected section of Flash memory is erased. The CCIF flag will set after the Erase Verify P-Flash
Section operation has completed. If the section is not erased, it means blank check failed, both MGSTAT
bits will be set.
18.4.6.4 Read Once Command
The Read Once command provides read access to a reserved 64 byte field (8 phrases) located in the
nonvolatile information register of P-Flash. The Read Once field is programmed using the Program Once
command described in
Section 18.4.6.6 . The Read Once command must not be executed from the Flash
block containing the Program Once reserved field to avoid code runaway.
Table 18-36. Erase Verify P-Flash Section Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x03
Global address [17:16] of
a P-Flash block
001 Global address [15:0] of the first phrase to be verified
010 Number of phrases to be verified
Table 18-37. Erase Verify P-Flash Section Command Error Handling
Register Error Bit Error Condition
FSTAT
ACCERR
Set if CCOBIX[2:0] != 010 at command launch
Set if command not available in current mode (see Table 18-27 )
Set if an invalid global address [17:0] is supplied see Table 18-3 )
Set if a misaligned phrase address is supplied (global address [2:0] != 000)
Set if the requested section crosses a the P-Flash address boundary
FPVIOL None
MGSTAT1 Set if any errors have been encountered during the read or if blank check failed.
MGSTAT0
Set if any non-correctable errors have been encountered during the read or if
blank check failed.
Table 18-38. Read Once Command FCCOB Requirements
CCOBIX[2:0] FCCOB Parameters
000 0x04 Not Required
001 Read Once phrase index (0x0000 - 0x0007)
010 Read Once word 0 value
011 Read Once word 1 value
100 Read Once word 2 value
101 Read Once word 3 value