CHAPTER 29 ELECTRICAL SPECIFICATIONS (TARGET)
Preliminary User’s Manual U17260EJ3V1UD
611
Flash Memory Programming Characteristics
(T
A
=
−
40 to +85
°
C, 2.7 V
≤
V
DD
= EV
DD
≤
5.5 V, AV
REF
≤
V
DD
, V
SS
= EV
SS
= AV
SS
= 0 V)
(1) Basic
characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
V
DD
supply current
I
DD
f
XP
= 10 MHz (TYP.), 20 MHz (MAX.)
4.5
11.0
mA
All block
T
eraca
20 200 ms
Erase time
Note 1
Block unit
T
erasa
20 200 ms
Write time
T
wrwa
TBD TBD
µ
s
Number of rewrites per chip
C
erwr
Retention: 10 years
1 erase + 1 write after erase = 1 rewrite
Note 2
100
Times
Notes 1.
The prewrite time before erasure and the erase verify time (writeback time) are not included.
2.
When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one
rewrite.
Remark
f
XP
: Main system clock oscillation frequency
(2) Serial write operation characteristics
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Time from RESET
↑
to FLMD0
count start
T
RFCF
4.1
17.1 ms
Count execution time
T
COUNT
10.8
13.2
ms
FLMD0 counter high-/low-level
width
T
CH
/T
CL
T
C
×
0.45
µ
s
FLMD0 counter rise/fall time
T
R
/T
F
12.5
µ
s
Remark
These values may change after evaluation.
Serial Write Operation
RESET
FLMD0
V
DD
0 V
V
DD
0 V
T
RFCF
T
CL
T
F
T
R
T
COUNT
T
CH
T
C