User’s Manual U13850EJ6V0UD
523
CHAPTER 18 FLASH MEMORY
The following products are the flash memory versions of the V850/SB1 and V850/SB2.
Caution
The flash memory versions and mask ROM versions differ in noise immunity and noise
radiation. If replacing a flash memory version with a mask ROM version when changing from
experimental production to mass production, make a thorough evaluation by using the CS
model (not ES model) of the mask ROM version.
(1) V850/SB1
µ
PD70F3033A, 70F3033AY, 70F3033B, 70F3033BY:
256 KB flash memory versions
µ
PD70F3030B, 70F3030BY:
384 KB flash memory versions
µ
PD70F3032A, 70F3032AY, 70F3032B, 70F3032BY:
512 KB flash memory versions
(2) V850/SB2
µ
PD70F3035A, 70F3035AY, 70F3035B, 70F3035BY:
256 KB flash memory versions
µ
PD70F3036H, 70F3036HY:
384 KB flash memory versions
µ
PD70F3037A, 70F3037AY, 70F3037H,70F3037HY:
512 KB flash memory versions
In the instruction fetch to this flash memory, 4 bytes can be accessed by a single clock, the same as in the mask
ROM version.
Writing to flash memory can be performed with the memory mounted on the target system (on board). A
dedicated flash programmer is connected to the target system to perform writing.
The following can be considered as the development environment and applications using flash memory.
• Software can be altered after the V850/SB1 or V850/SB2 is solder-mounted on the target system.
• Small scale production of various models is made easier by differentiating software.
• Data adjustment in starting mass production is made easier.
18.1 Features
• 4-byte/1-clock access (in instruction fetch access)
• All area one-shot erase/area unit erase
• Communication via serial interface with the dedicated flash programmer
• Erase/write voltage: V
PP
= 7.8 V
• On-board programming
• Flash memory programming in area (128 KB) units by self-writing
Содержание V850/SB1
Страница 2: ...User s Manual U13850EJ6V0UD 2 MEMO ...