517
7. Do not use interrupts while flash memory is being programmed or erased.
All interrupt requests, including NMI, should be disabled during FWE application to give priority
to program/erase operations (including emulation in RAM).
Bus release must also be disabled.
8. Do not perform additional programming. Erase the memory before reprogramming.
In on-board programming, perform only one programming operation on a 32-byte programming
unit block. In PROM mode, too, perform only one programming operation on a 128-byte
programming unit block. Programming should be carried out with the entire programming unit
block erased.
•
Use byte access on the registers that control the flash memory (FLMCR, EBR, FLMSR, and
RAMCR).
Period during which flash memory access is prohibited
(x: Wait time after setting SWE bit)
*
2
Period during which flash memory can be programmed
(Execution of program in flash memory prohibited, and data reads other than verify operations
prohibited)
Notes:
*
1 Except when switching modes, the level of the mode pins (MD
2
to MD
0
) must be fixed until power-off
by pulling the pins up or down.
*
2 See 22.2.6 Flash Memory Characteristics.
φ
V
CC
FWE
t
OSC1
Min 0
µ
s
Min 0
µ
s
t
MDS
t
MDS
MD
2
to MD
0
*
1
RES
SWE bit
SWE set
SWE cleared
Programming/
erasing possible
Wait time:
x
Figure 17.16 Power-On/Off Timing (Boot Mode)
Содержание H8/3060
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