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17.2
Overview of Flash Memory
(H8/3062F-ZTAT, H8/3062F-ZTAT R-Mask Version)
17.2.1
Features
The features of the flash memory in the H8/3062F-ZTAT and H8/3062F-ZTAT R-mask version
are summarized below.
•
Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
•
Programming/erase methods
The flash memory is programmed 32 bytes at a time. Erasing is performed in block units, with
the blocks to be erased specified by setting the corresponding register bits. The flash memory
is divided into three 32-kbyte blocks, one 28-kbyte block, and four 1-kbyte blocks.
•
Programming/erase times
The flash memory programming time is 10 ms (typ) for simultaneous 32-byte programming,
equivalent approximately to 300 µs (typ) per byte, and the erase time is 100 ms (typ) per block.
•
Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
•
On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
•
Automatic bit rate adjustment
For data transfer in boot mode, the chip’s bit rate can be automatically adjusted to match the
transfer bit rate of the host (9600 or 4800 bps).
•
Protect modes
There are three protect modes—hardware, software, and error—which allow protected status to
be designated for flash memory program/erase/verify operations.
•
Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
•
PROM mode
Flash memory can be programmed/erased in PROM mode, using a PROM programmer, as
well as in on-board programming mode.
Содержание H8/3060
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