21.3.5 Flash Memory Characteristics
Table 21-18 lists the flash memory characteristics.
Table 21-18 Flash Memory
Condition A: V
CC
= 2.7 V to 5.5 V, AV
CC
= 2.7 V to 5.5 V, V
REF
= 2.7 V to AV
CC
,
V
SS
= AV
SS
= 0 V, V
PP
= 12 V ± 0.6 V, ø = 1 MHz to 8 MHz, T
a
= –20°C to
+75°C (regular specifications), T
a
= –40°C to +85°C (wide-range specifications)
Condition C: V
CC
= 5.0 V ± 10%, AV
CC
= 5.0 V ± 10%, V
REF
= 4.5 V to AV
CC
,
V
SS
= AV
SS
= 0 V, V
PP
= 12 V ± 0.6 V, ø = 1 MHz to 16 MHz, T
a
= –20°C to
+75°C (regular specifications), T
a
= –40°C to +85°C (wide-range specifications)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Programming time
*
1
t
P
—
50
1000
µs
Erase time
*
1
t
E
—
1
30
s
Erase-program cycle
N
WEC
—
—
100
time
Verify setup time 1
*
1
t
VS1
4
—
—
µs
Verify setup time 2
*
1
t
VS2
2
—
—
µs
Flash memory read
t
FRS
50
—
—
µs
V
CC
≥
4.5 V
setup time
*
2
100
—
—
µs
V
CC
< 4.5 V
Notes: 1. To specify each time, follow the appropriate algorithm.
2. Before reading the flash memory, wait at least for the read setup time after clearing the
V
PP
E bit; lowering the voltage supplied to V
PP
from 12 V to 0–5 V; turning on the power
when the external clock is used; or returning from standby mode. When the V
PP
voltage
is cut off, t
FRS
indicates the time from when the V
PP
falls below V
CC
+ 2 V to when the
flash memory is read.
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