Rev. 2.00, 09/03, page 656 of 690
Tc3
Tc4
Tde
Tc2
Td1
Td2
Td3
Td4
Tc1
Tr
Tpw
Tp
t
CSD1
t
CSD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
AD1
t
RWD1
t
RWD1
t
RWD1
CKIO
A25 to A0
CSn
RD/
WR
A12/A11
*
1
D31 to D0
t
RASD1
t
RASD1
t
RASD1
t
RASD1
RASU/L
Read command
Column
address
Row address
(1-4)
t
CASD1
t
CASD1
CASU/L
t
BSD
t
BSD
(High)
BS
CKE
t
DQMD1
t
DQMD1
DQMxx
t
DACD
t
DACD
DACKn
*
2
t
RDH2
t
RDS2
t
RDH2
t
RDS2
t
CSD1
t
RASD1
t
CASD1
t
DQMD1
t
BSD
t
DACD
Notes: 1. Address pin to be connected to A10 of SDRAM.
2. DACKn is a waveform when active-low is specified.
Figure 25.32 Synchronous DRAM Burst Read Bus Cycle (Single Read
××××
4)
(Bank Active Mode: PRE + ACTV + READ Commands,
Different Row Address, CAS Latency = 2, TRCD = 1 Cycle)
Содержание SH7705
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