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Table 7.13
Relationship between A2/3BSZ[1:0], A2/3ROW[1:0], and Address Multiplex
Output (4)-1
Setting
A2/3 BSZ[1:0]
A2/3 ROW[1:0]
A2/3 COL[1:0]
10 (16 bits)
00 (11 bits)
00 (8 bits)
Output Pin of
This LSI
Row Address
Output Cycle
Column Address
Output Cycle
Synchronous DRAM
Pin
Function
A17
A25
A17
A16
A24
A16
A15
A23
A15
A14
A22
A14
Unused
A13
A21
*
2
A21
*
2
A12 (BA1)
A12
A20
*
2
A20
*
2
A11 (BA0)
Specifies bank
A11
A19
L/H
*
1
A10/AP
Specifies
address/precharge
A10
A18
A10
A9
A9
A17
A9
A8
A8
A16
A8
A7
A7
A15
A7
A6
A6
A14
A6
A5
A5
A13
A5
A4
A4
A12
A4
A3
A3
A11
A3
A2
A2
A10
A2
A1
A1
A9
A1
A0
Address
A0
A8
A0
Unused
Example of connected memory
16-Mbit product (512 kwords x 16 bits x 2 banks, column 8 bits product): 1 device
Notes: 1. L/H is a bit used in the command specification; it is fixed at L or H according to the
access mode.
2. Bank address specification
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