R01UH0822EJ0100 Rev.1.00
Page 1031 of 1041
Jul 31, 2019
RX13T Group
32. Electrical Characteristics
32.12 E2 DataFlash (Data Flash Memory) Characteristics
Note 1. Definition of program/erase cycle: The program/erase cycle is the number of erasing for each block. When the number of
program/erase cycles is n, each block can be erased n times. For instance, when 1-byte program is performed 1000 times for
different addresses in a 1-Kbyte block and then the block is erased, the program/erase cycle is counted as one. However, the
same address cannot be programmed more than once before the next erase cycle (overwriting is prohibited).
Note 2. Characteristic when using the flash programmer and the self-programming library provided from Renesas Electronics.
Note 3. These results are obtained from reliability testing.
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of FCLK should be ±3.5%.
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of FCLK should be ±3.5%.
Table 32.45
E2 DataFlash Characteristics (1)
Item
Symbol
Min.
Typ.
Max.
Unit
Conditions
Program/erase cycle*
N
DPEC
100000
1000000
—
Times
Data retention
After 10000 times of erase
t
DDRP
20*
—
—
Year
T
a
= +85°C
After 100000 times of erase
—
—
After 1000000 times of erase
—
—
T
a
= +25°C
Table 32.46
E2 DataFlash Characteristics (2): high-speed operating mode
Conditions: VCC = 2.7 V to 5.5 V, AVCC0 = VCC to 5.5 V, VSS = AVSS0 = 0 V
Temperature range for program/erase: T
a
= –40 to +105°C
Item
Symbol
FCLK = 1 MHz
FCLK = 32 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Program time
1-byte
t
DP1
—
86
761
—
40.5
374
μs
Erase time
1-Kbyte
t
DE1K
—
17.4
456
—
6.15
228
ms
4-Kbyte
t
DE4K
—
35.8
474
—
7.5
229
Blank check time
1-byte
t
DBC1
—
—
48
—
—
15.9
μs
1-Kbyte
t
DBC1K
—
—
1.58
—
—
0.127
ms
Erase operation forcible stop time
t
DSED
—
—
21.5
—
—
12.8
μs
DataFlash STOP recovery time
t
DSTOP
5.0
—
—
5
—
—
μs
Table 32.47
E2 DataFlash Characteristics (3): middle-speed operating mode
Conditions: VCC = 2.7 V to 5.5 V, AVCC0 = VCC to 5.5 V, VSS = AVSS0 = 0 V
Temperature range for program/erase: T
a
= –40 to +85°C
Item
Symbol
FCLK = 1 MHz
FCLK = 8 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Program time
1-byte
t
DP1
—
126
1160
—
85.4
818
μs
Erase time
1-Kbyte
t
DE1K
—
17.5
457
—
7.76
259
ms
4-Kbyte
t
DE4K
—
35.9
476
—
9.0
260
Blank check time
1-byte
t
DBC1
—
—
78
—
—
50
μs
1-Kbyte
t
DBC1K
—
—
1.61
—
—
0.369
ms
Erase operation forcible stop time
t
DSED
—
—
33.5
—
—
25.5
μs
DataFlash STOP recovery time
t
DSTOP
720
—
—
720
—
—
ns