R01UH0822EJ0100 Rev.1.00
Page 1030 of 1041
Jul 31, 2019
RX13T Group
32. Electrical Characteristics
Note:
Does not include the time until each operation of the flash memory is started after instructions are executed by software.
Note:
The lower-limit frequency of FCLK is 1 MHz during programming or erasing of the flash memory. When using FCLK at below
4 MHz, the frequency can be set to 1 MHz, 2 MHz, or 3 MHz. A non-integer frequency such as 1.5 MHz cannot be set.
Note:
The frequency accuracy of FCLK should be ±3.5%. Check the accuracy of the frequency from the clock source.
Table 32.44
ROM (Code Flash Memory) Characteristics (3) Middle-Speed Operating Mode
Conditions: VCC = 2.7 V to 5.5 V, AVCC0 = VCC to 5.5 V, VSS = AVSS0 = 0 V
Temperature range for program/erase: T
a
= –40 to +85°C
Item
Symbol
FCLK = 1 MHz
FCLK = 8 MHz
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
Program time
4-byte
t
P4
—
143
1330
—
96.8
932
μs
Erase time
1-Kbyte
t
E1K
—
8.3
269
—
5.85
219
ms
128-Kbyte
t
E128K
—
203
464
—
46
260
Blank check time
4-byte
t
BC4
—
—
78
—
—
50
μs
1-Kbyte
t
BC1K
—
—
1.61
—
—
0.369
ms
Erase operation forcible stop time
t
SED
—
—
33.6
—
—
25.6
μs
Start-up area switching setting time
t
SAS
—
13.2
549
—
7.6
445
ms
Access window setting time
t
AWS
—
13.2
549
—
7.6
445
ms
ROM mode transition wait time 1
t
DIS
2
—
—
2
—
—
μs
ROM mode transition wait time 2
t
MS
3
—
—
3
—
—
μs