FXTH870xD
Sensors
162
Freescale Semiconductor, Inc.
17.14
RF Output Stage
1.8
V
DD
3.6, T
L
T
A
T
H
, unless otherwise specified.
Power output based on using Dynamic RF Power Correction firmware routine.
Output load of 50
resistance as shown in
Figure 125
unless otherwise specified.
MCU in STOP1 mode during all RF tests.
RF output will shutdown when the total RF I
DD
causes V
DD
to fall below 1.8 V (V
DD
= V
BATT
- I
BATT
x R
BATT
). See
Figure 126
.
#
Characteristic
Symbol
Min
Typ
Max
Units
1400
1401
Nominal Output Power with 50
matching network
315 MHz, T
A
= 25 °C, V
DD
= 3 V, PWR[4:0] = 01110
434 MHz, T
A
= 25 °C, V
DD
= 3 V, PWR[4:0] = 01111
P
RF
P
RF
4.0
3.5
5.2
4.9
6.0
6.0
dBm
dBm
1402*
Nominal Output Power with 50
matching network
at maximum power step, PWR[4:0] = 10100.
Temperature and voltage range defined
by
P
RF
3
—
—
dBm
1403
1404
1405
Programmable Power Adjustment
PWR[4:0] = 00000 through 11111
Low Power Mode (PWR[4:0] = 00000)
Range (nominal, (PWR[4:0] > 00000)
Adjustment step (-1.5 to +8 dBm)
P
LPM
P
RF
P
ADJ
—
-1.5
—
-10
—
0.5
—
8.0
—
dBm
dBm
dBm
1406
Programmable Frequency Steps
Carrier & FSK Deviation
(AFREQ[12:0] and BFREQ[12:0])
f
STEP
—
3.174
—
kHz
1407
External Crystal Frequency (
)
f
XTAL
—
26.000
—
MHz
1408
Fixed portion of RF start process
t
S-RCTS
—
—
300
sec
1409
Variable portion of RF start process
Bits
—
3
—
bit times
1410
Total RF transmit start time from write of SEND bit to start of
RF @ 2,000 bps,
t
RF
= t
S-RCTS
+ (Bits * bps
-1
)
t
RF2
—
—
1.8
msec
1411
Total RF transmit start time from write of SEND bit to start of
RF @ 9,600 bps,
t
RF
= t
S-RCTS
+ (Bits * bps
-1
)
t
RF9.6
—
—
613
sec
1412
Total RF transmit start time from write of SEND bit to start of
RF @ 20,000 bps,
t
RF
= t
S-RCTS
+ (Bits * bps
-1
)
t
RF20
—
—
450
sec
1413
OOK Modulation Depth
M
OOK
50
—
—
dBc
1414
Manchester Encoding Data Rate
Bit Rate Dependent on accuracy of MFO (
DR
—
—
±5
%
1415
Modulation Duty-Cycle (OOK and FSK)
DC
45
50
55
%
1416
XTAL Oscillator Margin (over 26 MHz) (
)
ML
600
—
—
1417
1418
Harmonic 2 Level (315 and 434 MHz bands, with matching
reference network)
V
DD
= 3 V, T
A
= 25 °C, PWR[4:0] = 01110
1.8
V
DD
3.6, T
L
T
A
T
H
, power step adjusted to
reach the targeted power in each domain
H2
H2
—
—
-35
-25
-22
-20
dBc
dBc
1419
1420
Harmonic 4 Level and above (315 and 434 MHz bands, with
matching reference network)
V
DD
= 3 V, T
A
= 25 °C, PWR[4:0] = 01110
1.8
V
DD
3.6, T
L
T
A
T
H
, power step adjusted to
reach the targeted power in each domain
H4
H4
—
—
—
—
-30
-30
dBc
dBc
Summary of Contents for FXTH870 D Series
Page 86: ...FXTH870xD Sensors 84 Freescale Semiconductor Inc Figure 57 Data Flow For Measurements...
Page 171: ...FXTH870xD Sensors Freescale Semiconductor Inc 169 Figure 128 QFN Case Outline...
Page 172: ...FXTH870xD Sensors 170 Freescale Semiconductor Inc Figure 129 QFN Case Outline...
Page 173: ...FXTH870xD Sensors Freescale Semiconductor Inc 171...