CHAPTER 20 ELECTRICAL SPECIFICATIONS ((T) product, (S) product, (R) product, (A) product)
User’s Manual U16898EJ3V0UD
341
(T), (S), (R), (A) product T
A
=
−
40 to
+
85
°
C
Flash Memory Programming Characteristics (T
A
= –40 to +85
°
C, 2.7 V
≤
V
DD
≤
5.5 V, V
SS
= 0 V)
Parameter Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Supply current
I
DD
V
DD
= 5.5 V
7.0
mA
Erasure count
Note 1
(per 1 block)
N
ERASE
T
A
=
−
40 to +85
°
C 1000
Times
4.5 V
≤
V
DD
≤
5.5 V
0.8
s
3.5 V
≤
V
DD
< 4.5 V
1.0
s
T
A
=
−
10 to +85
°
C,
N
ERASE
≤
100
2.7 V
≤
V
DD
< 3.5 V
1.2
s
4.5 V
≤
V
DD
≤
5.5 V
4.8
s
3.5 V
≤
V
DD
< 4.5 V
5.2
s
T
A
=
−
10 to +85
°
C,
N
ERASE
≤
1000
2.7 V
≤
V
DD
< 3.5 V
6.1
s
4.5 V
≤
V
DD
≤
5.5 V
1.6
s
3.5 V
≤
V
DD
< 4.5 V
1.8
s
T
A
=
−
40 to +85
°
C,
N
ERASE
≤
100
2.7 V
≤
V
DD
< 3.5 V
2.0
s
4.5 V
≤
V
DD
≤
5.5 V
9.1
s
3.5 V
≤
V
DD
< 4.5 V
10.1
s
Chip erase time
T
CERASE
T
A
=
−
40 to +85
°
C,
N
ERASE
≤
1000
2.7 V
≤
V
DD
< 3.5 V
12.3
s
4.5 V
≤
V
DD
≤
5.5 V
0.4
s
3.5 V
≤
V
DD
< 4.5 V
0.5
s
T
A
=
−
10 to +85
°
C,
N
ERASE
≤
100
2.7 V
≤
V
DD
< 3.5 V
0.6
s
4.5 V
≤
V
DD
≤
5.5 V
2.6
s
3.5 V
≤
V
DD
< 4.5 V
2.8
s
T
A
=
−
10 to +85
°
C,
N
ERASE
≤
1000
2.7 V
≤
V
DD
< 3.5 V
3.3
s
4.5 V
≤
V
DD
≤
5.5 V
0.9
s
3.5 V
≤
V
DD
< 4.5 V
1.0
s
T
A
=
−
40 to +85
°
C,
N
ERASE
≤
100
2.7 V
≤
V
DD
< 3.5 V
1.1
s
4.5 V
≤
V
DD
≤
5.5 V
4.9
s
3.5 V
≤
V
DD
< 4.5 V
5.4
s
Block erase time
T
BERASE
T
A
=
−
40 to +85
°
C,
N
ERASE
≤
1000
2.7 V
≤
V
DD
< 3.5 V
6.6
s
Byte write time
T
WRITE
T
A
=
−
40 to +85
°
C, N
ERASE
≤
1000
150
µ
s
Per 1 block
6.8
ms
Internal verify
T
VERIFY
Per 1 byte
27
µ
s
Blank check
T
BLKCHK
Per 1 block
480
µ
s
Retention years
T
A
= 85
°
C
Note 2
, N
ERASE
≤
1000
10
Years
Note 1.
Depending on the erasure count (N
ERASE
), the erase time varies. Refer to the chip erase time and block
erase time parameters.
2.
When the average temperature when operating and not operating is 85
°
C.
Remark
When a product is first written after shipment, “erase
→
write” and “write only” are both taken as one rewrite.