500
CK
A21–A0
RAS
CAS
WRH
,
WRL
,
WR
(Read)
DACK0
DACK1
(Read)
AD15–AD0
DPH, DPL
(Read)
t
AD
T
p
T
r
T
c
T
c
T
c
t
AD
t
RASD1
t
RASD2
t
CP
t
ASC
t
RDH
*
5
t
RAC1
*
3
t
DACD1
t
DACD2
Row address
Column address
Column address
Column address
t
CAC1
*
1
T
c
t
ACC1
*
2
t
RDS
RD
(Read)
t
RDD
t
ACP
t
RSD
t
RDH
*
4
Column address
Notes:
*
1 For t
CAC1
, use t
cyc
×
0.65 – 35 (for 35% duty) or t
cyc
×
0.5 – 35 (for 50% duty) instead of
t
cyc
– t
AD
– t
ASC
– t
RDS
.
It is not necessary to meet the t
RDS
specification as long as the t
CAC1
specification is met.
*
2 For t
ACC1
, use t
cyc
– 44 instead of t
cyc
– t
AD
– t
RDS
.
It is not necessary to meet the t
RDS
specification as long as the t
ACC1
specification is met.
*
3 For t
RAC1
, use t
cyc
×
1.5 – 35 instead of t
cyc
×
1.5 – t
RASD1
– t
RDS
.
It is not necessary to meet the t
RDS
specification as long as the t
RAC1
specification is met.
*
4 t
RDH
is measured from A21—A0 or
CAS
, whichever is negated first.
*
5 t
RDH
is measured from A21—A0,
RAS
, or
CAS
, whichever is negated first.
Figure 20.25 (a) DRAM Bus Cycle (Short-Pitch, High-Speed Page Mode: Read)
Содержание HD6417032
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Страница 525: ...490 CK RAS CAS TRp TRc TRcc tRASD1 tRASD2 tCASD3 tCASD2 TRr tCSR Figure 20 18 Self Refresh ...
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