451
Table 17.2Selecting PROM Programming Mode
Pin
Mode
CE
OE
PGM
V
PP
V
CC
I/O7–I/O0
A16–A0
Write
0
1
0
V
PP
V
CC
Data input
Address input
Verify
0
0
1
Data output
Program inhibit
0
0
0
High impedance
0
1
1
1
0
0
1
1
1
Legend:
0: Low
1: High
V
PP
: V
PP
level
V
CC
: V
CC
level
17.3.2Write/Verify and Electrical Characteristics
Write/Verify: Write/verify can be accomplished by an efficient high-speed, high-reliability
programming method. This method can write data quickly and accurately without placing voltage
stress on the device. The basic flowchart for this high-speed, high-reliability programming method
is shown in figure 17.4.
Содержание HD6417032
Страница 21: ......
Страница 35: ...xiv ...
Страница 85: ...50 ...
Страница 101: ...66 ...
Страница 129: ...94 ...
Страница 135: ...100 ...
Страница 343: ...308 ...
Страница 369: ...334 ...
Страница 383: ...348 ...
Страница 475: ...440 ...
Страница 525: ...490 CK RAS CAS TRp TRc TRcc tRASD1 tRASD2 tCASD3 tCASD2 TRr tCSR Figure 20 18 Self Refresh ...
Страница 578: ...543 CK RAS CAS TRp TRc TRcc tRASD1 tRASD2 tCASD3 tCASD2 TRr tCSR Figure 20 62 Self Refresh ...
Страница 689: ...654 ...