iBAT 2.0-CIM01C2
User Manual
A Technical Specifications
Issue 07 (2019-01-02)
Copyright © Huawei Technologies Co., Ltd.
71
Item
Specifications
Radiated
susceptibility (RS)
IEC61000-4-3
10 V/m, criterion A
Conducted
susceptibility (CS)
IEC61000-4-6
DC port: 10 V, criterion A
Signal port: 3 V, criterion A
Surge immunity
IEC61000-4-5, criterion B
DC port: 2 kV in differential mode
PoE port: 0.5 kV/42 ohms in differential mode, 2 kV/42 ohms in
common mode
BCB DI port: 0.5 kV/42 ohms in differential mode, 2 kV/42
ohms in common mode
BCB DO port: 0.5 kV/42 ohms in differential mode, 1 kV/42
ohms in common mode
Voltage dips
IEC61000-4-29
Voltage dip and short interruption: 40%/70%/0% OUT, 1 ms, 3
ms, 10 ms, 30 ms, 100 ms, 300 ms, 1000 ms (criterion B)
Voltage variations: 80%/120% UT, 100 ms, 300 ms, 1000 ms, 3s,
10s (criterion A)
Power magnetic
susceptibility
(PMS)
IEC 61000-4-8
Interference direction H/V, interference intensity 10 A/M, criterion
B
Table A-3
BIM EMC specifications
Item
Specifications
RE
CISPR32, Class B
RS
Immunity to radiated electric fields
80 MHz to 2700 MHz
Test level: 10 V/m (Unmodulated, rms)
ESD
IEC61000-4-2
Enclosure touchable by hand during normal operations: contact
discharge ±6 kV; air discharge ±8 kV, criterion B (power-on before
testing)
Conductor in the signal port; contact discharge ±2 kV, criterion R
(power-on before testing)
