CMT2380F64
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Rev 0.3 | 8 / 83
1 Electrical Characteristic
VDD= 3.3 V
，
TOP= 25 °C
，
FRF = 433.92 MHz, sensitivity is measured by receiving a PN9 coded data and matching
impedance to
50Ω under 0.1% BER standard.Unless otherwise stated, all results are tested on the CMT2380F17-EM
evaluation board.
1.1
Recommended Operation Condition
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Operating power voltage
V
DD-RF
1.8
3.6
V
V
MCU
CPU working rate 0-48 MHz
1.8
3.6
V
Operating temperature
T
OP
-40
85
℃
RF power voltage slope
V
RF-PSR
1
mV/us
Voltage slope
V
MCU-PSR
10
mV/us
AHB clock frequency
f
HCLK
0
48
MHz
APB1 clock frequency
f
PCLK1
0
48
MHz
APB2 clock frequency
f
PCLK2
0
48
MHz
1.2
Absolute Maximum Rating
Parameter
Symbol
Conditions
Min
Max
Unit
Supply Voltage
V
DD
-0.3
3.6
V
Interface Voltage
V
IN
-0.3
3.6
V
Junction Temperature
T
J
-40
125
℃
Storage Temperature
T
STG
-50
150
℃
Soldering Temperature
T
SDR
Retention at least 30 s
255
℃
ESD Rating
[2]
Human body mode(HBM)
-2
2
kV
Latch-up Current
@ 85
℃
-100
100
mA
MCU-VDD maximum current to
Ground
200
mA
MCU pin maximum sink current
16
mA
Notes
：
[1]. Exceeding the Absolute Maximum Ratings may cause permanent damage to the equipment. This value is a pressure rating
and does not imply that the function of the equipment is affected under this pressure condition, but if it is exposed to absolute
maximum ratings for extended periods of time, it may affect equipment reliability.
[2]. CMT2380F64 is a high performance RF integrated circuit. The operation and assembly of this chip should only be performed
on a workbench with good protection.
Caution!
ESD sensitive device. Precaution should be used when handling the device in order to
prevent permanent damage.
