Section 4: Multi-frequency capacitance-voltage unit
Model 4200A-SCS Parameter Analyzer Reference Manual
4-64
4200A-901-01 Rev. C / February 2017
MOS Capacitor Lifetime Test Project (moscap-lifetime)
Generation lifetime is an important parameter of metal oxide semiconductor (MOS) capacitors
because it determines the storage time of the device. The Zerbst method is a common technique for
lifetime measurements. Generating a Zerbst plot requires both a C-V sweep and a C-t sweep.
The C-V sweep derives the oxide capacitance (C
OX
), the minimum capacitance (C
MIN
), and the doping
concentration (N
AVG
and N
BULK
). The capacitance-time (C-t) sweep is then generated. During the C-t
sweep, the MOS capacitor is initially held in accumulation and then biased into deep depletion. While
holding this bias, the capacitance is measured as a function of time.
The results of the derived parameters (C
OX
, C
MIN
, N
AVG
) from the C-V sweep are integrated with the
data taken during the C-t measurements to compute the generation rate and depletion depth. The
generation rate is graphed as a function of the calculated depletion depth.
moscap-lifetime connections
The next figure shows the basic test configuration;
(on page 4-5) provides
connection detai
ls. Use only the supplied (red) 100 Ω SMA cables for connections to the 4210-CVU.
Be sure that all used SMA cables are the same length.
After making or changing connections, be sure to use the Confidence Check diagnostic tool and do
connection compensation tests. Refer to
(on page 4-10) for details.
Figure 127: Basic configuration for lifetime testing
