29 eleCTRiCal ChaRaCTeRiSTiCS
S1C17624/604/622/602/621 TeChniCal Manual
Seiko epson Corporation
29-15
SVD circuit current consumption
Unless otherwise specified: V
DD
= 1.8 to 3.6V, V
SS
= 0V, Ta = 25
°
C
item
Symbol
Condition
Min.
Typ.
Max.
unit
SVD circuit current
*
1
I
SVD
V
DD
= 3.6V, SVDC[3:0] = 0x1
8
15
µA
*
1 This value is added to the current consumption during execution or current consumption during execution in heavy load protection
mode when the SVD circuit is active.
Flash Memory Characteristics
29.13
analog characteristics
Unless otherwise specified: V
DD
= 2.7 to 3.6V (VD1MD = 1), V
SS
= 0V, Ta = -25 to 70
°
C
item
Symbol
Condition
Min.
Typ.
Max.
unit
Erase time
*
1
t
SE
Erase 4K bytes
25
ms
Programming time
*
1
t
BP
Program 16 bits
20
µs
Erase/program count
*
2
C
FEP
1000
times
*
1 Data transfer and data verification are included and erase/program start control time is not included.
*
2 The erase/program count assumes that “e programming” or “overwrite programming” is one count and the programmed
data is guaranteed to be retained for 10 years.
Flash memory current consumption
Unless otherwise specified: V
DD
= 2.7 to 3.6V (VD1MD = 1), V
SS
= 0V, Ta = 25
°
C, FLCYC[2:0] = 0x4 (1 cycle),
CCLKGR[1:0] = 0x0 (gear ratio 1/1)
item
Symbol
Condition
Min.
Typ.
Max.
unit
Flash memory erasing current
*
1
I
FERS
When CPU runs with 8MHz, VD1MD = 1
7
14
mA
Flash memory programming current
*
2
I
FPRG
When CPU runs with 8MHz, VD1MD = 1
7
14
mA
*
1 This value is added to the current consumption during execution when the Flash memory is being erased in self-programming mode.
*
2 This value is added to the current consumption during execution when the Flash memory is being programmed in self-program-
ming mode.