223
32072H–AVR32–10/2012
AT32UC3A3
16.6.3
Clocks
The clock for the SDRAMC bus interface (CLK_SDRAMC) is generated by the Power Manager.
This clock is enabled at reset, and can be disabled in the Power Manager. It is recommended to
disable the SDRAMC before disabling the clock, to avoid freezing the SDRAMC in an undefined
state.
16.6.4
Interrupts
The SDRAMC interrupt request line is connected to the interrupt controller. Using the SDRAMC
interrupt requires the interrupt controller to be programmed first.
16.7
Functional Description
16.7.1
SDRAM Device Initialization
The initialization sequence is generated by software. The SDRAM devices are initialized by the
following sequence:
1.
SDRAM features must be defined in the CR register by writing the following fields with
the desired value: asynchronous timings (TXSR, TRAS, TRCD, TRP, TRC, and TWR),
Number of Columns (NC), Number of Rows (NR), Number of Banks (NB), CAS Latency
(CAS), and the Data Bus Width (DBW).
2.
For mobile SDRAM devices, Temperature Compensated Self Refresh (TCSR), Drive
Strength (DS) and Partial Array Self Refresh (PASR) fields must be defined in the Low
Power Register (LPR).
3.
The Memory Device Type field must be defined in the Memory Device Register
(MDR.MD).
4.
A No Operation (NOP) command must be issued to the SDRAM devices to start the
SDRAM clock. The user must write the value one to the Command Mode field in the
SDRAMC Mode Register (MR.MODE) and perform a write access to any SDRAM
address.
5.
A minimum pause of 200µs is provided to precede any signal toggle.
6.
An All Banks Precharge command must be issued to the SDRAM devices. The user
must write the value two to the MR.MODE field and perform a write access to any
SDRAM address.
7.
Eight Auto Refresh commands are provided. The user must write the value four to the
MR.MODE field and performs a write access to any SDRAM location eight times.
8.
A Load Mode Register command must be issued to program the parameters of the
SDRAM devices in its Mode Register, in particular CAS latency, burst type, and burst
length. The user must write the value three to the MR.MODE field and perform a write
access to the SDRAM. The write address must be chosen so that BA[1:0] are set to
zero. See
for details about Load Mode Register command.
9.
For mobile SDRAM initialization, an Extended Load Mode Register command must be
issued to program the SDRAM devices parameters (TCSR, PASR, DS). The user must
write the value five to the MR.MODE field and perform a write access to the SDRAM.
The write address must be chosen so that BA[1] or BA[0] are equal to one. See
for details about Extended Load Mode Register command.
10. The user must go into Normal Mode, writing the value 0 to the MR.MODE field and per-
forming a write access at any location in the SDRAM.
11. Write the refresh rate into the Refresh Timer Count field in the Refresh Timer Register
(TR.COUNT). The refresh rate is the delay between two successive refresh cycles. The
SDRAM device requires a refresh every 15.625µs or 7.81µs. With a 100MHz fre-
Содержание AT32UC3A3128
Страница 61: ...61 32072H AVR32 10 2012 AT32UC3A3 PLLEN PLL Enable 0 PLL is disabled 1 PLL is enabled...
Страница 260: ...260 32072H AVR32 10 2012 AT32UC3A3 5 2560 3071 6 3072 3583 7 3584 4095 Bit Index n Sector Boundaries...
Страница 592: ...592 32072H AVR32 10 2012 AT32UC3A3 Manchester Configuration Register on page 614...
Страница 989: ...989 32072H AVR32 10 2012 AT32UC3A3 37 2 Package Drawings Figure 37 1 TFBGA 144 package drawing...
Страница 991: ...991 32072H AVR32 10 2012 AT32UC3A3 Figure 37 3 VFBGA 100 package drawing...