
Flexible static memory controller (FSMC)
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Doc ID 13902 Rev 12
NOR-Flash memories are addressed in 16-bit words. The maximum capacity is 512 Mbit
(26 address lines).
PSRAM/SRAM
PSRAM memories are addressed in 16-bit words. The maximum capacity is 512 Mbit (26
address lines).
21.5.2 Supported
memories and transactions
below displays an example of the supported devices, access modes and
transactions when the memory data bus is 16-bit for NOR, PSRAM and SRAM.
Transactions not allowed (or not supported) by the FSMC in this example appear in gray.
NWE
O Write
enable
NL(=NADV)
O
Latch enable (this signal is called address valid, NADV, by some NOR
Flash devices)
NWAIT
I
NOR Flash wait input signal to the FSMC
Table 106.
Non muxed I/Os PSRAM/SRAM
FSMC signal name
I/O
Function
CLK
O
Clock (only for PSRAM synchronous burst)
A[25:0] O
Address
bus
D[15:0] I/O
Data
bidirectional
bus
NE[x]
O
Chip select, x = 1..4 (called NCE by PSRAM (Cellular RAM i.e. CRAM))
NOE
O Output
enable
NWE
O Write
enable
NL(= NADV)
O
Address valid only for PSRAM input (memory signal name: NADV)
NWAIT
I
PSRAM wait input signal to the FSMC
NBL[1]
O
Upper byte enable (memory signal name: NUB)
NBL[0]
O
Lowed byte enable (memory signal name: NLB)
Table 105.
Muxed I/O NOR Flash (continued)
FSMC signal name
I/O
Function