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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 154 of 526
REJ09B0326-0600
High-Speed, High-Reliability Erasing:
The flash memory in the H8/3644F, H8/3643F, and
H8/3642AF uses a high-speed, high-reliability erasing procedure. This procedure provides higher
erasing speed without subjecting the device to voltage stress and without sacrificing the reliability
of data reliability.
Figure 6.19 shows the basic high-speed, high-reliability erasing flowchart. Tables 6.15 and 6.16
list the electrical characteristics during erasing.
Start
End
Error
Program all bits to 0
*
Address = 0
n = 0
n + 1
→
n
Erase setup/erase command
Erase-verify command
NG
No
No
Yes
OK
Yes
Wait (10 ms)
Wait (6
µ
s)
A 1
→
address
Verify?
n = 3000?
Last address?
Note:
*
Follow the high-speed, high-reliability programming flowchart in programming all bits.
If 0 has already been written, perform programming for unprogrammed bits.
Figure 6.19 High-Speed, High-Reliability Erasing
Summary of Contents for F-ZTAT H8/3642A Series
Page 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Page 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Page 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Page 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Page 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Page 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Page 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Page 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Page 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...