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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 106 of 526
REJ09B0326-0600
6.3.1
Writing and Verifying
An efficient, high-speed, high-reliability method is available for writing and verifying the PROM
data. This method achieves high speed without voltage stress on the device and without lowering
the reliability of written data. Data in unused address areas has a value of H'FF. The basic flow of
this high-speed, high-reliability programming method is shown in figure 6.3.
Start
Set write/verify mode
V = 6.0 V ±0.25 V, V = 12.5 V ±0.3 V
CC
PP
Address = 0
n = 0
n + 1 n
→
PW
Verify
Write time t = 3n ms
OPW
Last address?
Set read mode
V
CC
= 5.0 V ±0.5 V, V
PP
= V
CC
Read all
addresses?
End
Error
n 25
<
A 1 address
→
No
Yes
NG
OK
Yes
No
NG
Yes
Write time t = 0.2 ms ±5%
Figure 6.3 High-Speed, High-Reliability Programming Flow Chart
Summary of Contents for F-ZTAT H8/3642A Series
Page 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Page 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Page 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Page 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Page 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Page 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Page 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Page 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Page 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...