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Section 6 ROM
Rev. 6.00 Sep 12, 2006 page 153 of 526
REJ09B0326-0600
High-Speed, High-Reliability Programming:
Unused areas of the flash memory in the
H8/3644F, H8/3643F, or H8/3642AF contain H'FF data (initial value). The flash memory uses a
high-speed, high-reliability programming procedure. This procedure provides higher programming
speed without subjecting the device to voltage stress and without sacrificing the reliability of the
programmed data.
Figure 6.18 shows the basic high-speed, high-reliability programming flowchart. Tables 6.15 and
6.16 list the electrical characteristics during programming.
Start
End
Error
Set V
PP
= 12.0 V ±0.6 V
Address = 0
n = 0
n + 1
→
n
Program setup command
NG
No
No
Yes
OK
Yes
Program command
Wait (25
µ
s)
Program-verify command
Wait (6
µ
s)
A 1
→
address
Set V
PP
= V
CC
Verify?
n = 20?
Last address?
Figure 6.18 High-Speed, High-Reliability Programming
Summary of Contents for F-ZTAT H8/3642A Series
Page 6: ...Rev 6 00 Sep 12 2006 page iv of xx ...
Page 8: ...Rev 6 00 Sep 12 2006 page vi of xx ...
Page 22: ...Rev 6 00 Sep 12 2006 page xx of xx ...
Page 124: ...Section 5 Power Down Modes Rev 6 00 Sep 12 2006 page 102 of 526 REJ09B0326 0600 ...
Page 188: ...Section 6 ROM Rev 6 00 Sep 12 2006 page 166 of 526 REJ09B0326 0600 ...
Page 190: ...Section 7 RAM Rev 6 00 Sep 12 2006 page 168 of 526 REJ09B0326 0600 ...
Page 298: ...Section 9 Timers Rev 6 00 Sep 12 2006 page 276 of 526 REJ09B0326 0600 ...
Page 378: ...Section 12 A D Converter Rev 6 00 Sep 12 2006 page 356 of 526 REJ09B0326 0600 ...
Page 446: ...Section 13 Electrical Characteristics Rev 6 00 Sep 12 2006 page 424 of 526 REJ09B0326 0600 ...