Cypress S6J331EJSESE20000, Manual

Page: 260 / 326

Document Number: 002-10635 Rev. *I Page
260 of 325
S6J3310/20/30/40 Series
9.1.7
FLASH Memory
9.1.7.1
Electrical Characteristics
Parameter
Rating
Unit Remarks
Min Typ Max
Sector erase time
- 120 180 ms
Large sector *1
Internal preprogramming time included
- 120 180 ms
8 kB sector *1
Internal preprogramming time included
- 120 180 ms
4 kB sector
*2
Internal preprogramming time included
16-bit write time (Program) - 30 60 µs System-level overhead time excluded *1
32-bit write time (Program) - 30 60 µs System-level overhead time excluded
*1
64-bit write time (Program) - 30 60 µs System-level overhead time excluded *1
256-bit write time (Program) - 40
70
µs System-level overhead time excluded *1
Page mode write time
(Program)
- 320
600
µs System-level overhead time excluded
*1
32-bit write time (Work) - 30
60
µs System-level overhead time excluded
*2
Erase count /
Data retention time (Program)
1,000/20 years - - -
Temperature at write/erase time
Average temperature T
A
= +85 degrees
Celsius
Erase count /
Data retention time (Work)
1,000/20 years
10,000/10 years
100,000/5 years - - -
Temperature at write/erase time
Average temperature T
A
= +85 degrees
Celsius
*1: Guaranteed value for up to 1,000 erases
*2: Guaranteed value for up to 100,000 erases
9.1.7.2
Notes
While the Flash memory is written or erased, shutdown of the external power (Vcc5) is prohibited.
In the application system where Vcc5 might be shut down while writing or erasing, be sure to turn the
power off by using an external voltage detection function.
To put it concretely, after the external power supply voltage falls below the detection voltage (V
DL
), hold Vcc5 at 2.7 V or more
within the duration calculated by the following expression:
Td
*1 [μs] + ( 1 / F
CRF
*2 [MHz] ) x 1029 + 25 [μs]
*1: See " 9.1.4.11 Low Voltage Detection (External Voltage) "
*2: See " 9.1.4.1 Source Clock Timing "