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Glossary
ZEISS
Glossary
aBSD
Annular Backscattered Electron Detector
AIC
Ampere Interrupting Capacity
Aperture
Mechanical limitation of an opening ori-
ented perpendicular to the optical axis,
which filters out electrons whose trajec-
tories (tracks) do not run close to the op-
tical axis.
aSTEM
Annular Scanning Transmission Electron
Microscopy
Astigmatism
Lens aberration that distorts the shape of
the electron beam, compensated by the
stigmator.
Backscattered electrons
High-energy electrons that are liberated
from the specimen surface when the
specimen is hit by the primary electron
beam.
Bakeout
Degassing of surfaces of a vacuum sys-
tem by heating during the pumping
process.
Beam booster
Anode and liner tube of the Gemini col-
umn are connected mechanically and
electrically forming the beam booster. A
booster voltage (UB, liner voltage) of
+8 kV is applied to the beam booster, so
that a high beam energy is maintained
throughout the entire column. The beam
booster technique has two main advan-
tages: It minimizes beam widening, that
may occur due to stochastic electron-
electron interactions. Consequently there
is almost no loss in beam brightness,
even at low acceleration voltages. Sec-
ondly, the beam booster technique en-
hances protection against external stray
fields.
BSD
Backscattered Electron Detector
BSE
Backscattered Electron
CAN
Controller Area Network
CCD
Charge-Coupled Device
CL
Cathodoluminescence
Condenser
Device that collects and focuses the elec-
tron beam onto the specimen.
D
Depth
DECT
Digital Enhanced Cordless Telecommuni-
cations
EBSD
Electron Backscatter Diffraction
EC
European Community
EDS
Energy Dispersive X-ray Spectroscopy
EDX
Energy Dispersive X-ray Spectroscopy
EHT
Extra High Tension
EIGA
European Industrial Gases Association
EM
Electron Microscope
EM server
A server that implements the internal
communication between control soft-
ware and microscope hardware.
6
Instruction Manual ZEISS Crossbeam 550 | en-US | Rev. 3 | 349500-8122-000
Содержание Crossbeam 550
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