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APPENDIX F
13-16
Version 1.23
MODEL 5000 SERIES MANUAL
ANET programmed to IN. The capacitor between the collector and base will help
keep collector current flowing as the device slides into breakdown.
13.1.2
Base Pulse Programming - BV
CEO
In the test for transistor B
VCEO
, some device types make the transition to the active
region most smoothly when a base pulse is applied immediately prior to the collector
current drive. On certain low frequency power devices, this pulse is not only
unnecessary but also slows the response of the device.
To compensate for these differences, the base pulse application is programmable in
the B
VCEO
test as part of the test edit screen.
For most devices, leave the base pulse set to OFF. If there is any doubt, attach a
sc
ope to the “A” terminal of 5000 Series Tester and measure B
VCEO
while observing
the scope trace. Perform the measurement with and without the base pulse
programmed and observe, in most instances, only a slight change in pulse duration.
13.1.3
BV
CEO(SUS)
This test is similar to B
VCEO
in that its definition is the same as B
VCEO
. It is, however,
usually specified at higher collector current levels and is therefore, normally
performed as an inductive load test to limit the energy to the device. The test is
performed by switching from a forward biased base-emitter to an open base-emitter
with a specified inductive load at the specified collector current.
By performing the test in this way, the energy to the device is limited and as the
breakdown voltage increases, the applied pulse narrows, making the pulse width
variable. Pulses are often as short as 10
μS with vendor specified inductances.
The 5000 Series Tester Model 5300HX can perform this test using the ADP-410
Adaptor (see Appendix O for details).
13.1.4
BV
CER,S,V
These breakdown tests are similar to BV
CEO
with specified base to emitter conditions.
BV
CER
has a resistor between the base and emitter, BV
CES
shorts the base to emitter
and BV
CEV
places a reverse bias voltage from base to emitter. All these conditions
cause the breakdown voltage to increase, approaching, in most cases, BV
CBO
. For
this reason, this test is usually specified to be performed with an inductive load to
limit the energy to the device as in V
CEO(SUS)
(see Appendix O).
Holding Current Test Method
General Electric in its standard test methods for thyristors has described three
methods of performing the holding current tests. Two of these methods are listed as
preferred, one of which is used in the 5000 Series Tester. That method uses a fixed
load resistor and reduces the principal supply voltage until the thyristor reaches the
specified holding current. The test circuit and a sketch showing a thyristor
characteristic are represented in Figure 13-5.
Note: The external capacitor must withstand the highest
expected breakdown voltage.
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