CHAPTER 31 ELECTRICAL SPECIFICATIONS
Page 907 of 920
31.8
RAM Data Retention Characteristics
Note
The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset
is effected, but RAM data is not retained when a POR reset is effected.
31.9
Flash Memory Programming Characteristics
Note 1.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.
Note 2.
When using flash memory programmer and Renesas Electronics self-programming library.
Note 3.
These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics
Corporation.
31.10 Dedicated Flash Memory Programmer Communication (UART)
(T
A
=
‒
40 to +85
°
C, V
SS
= 0V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Data retention supply voltage
V
DDDR
3.6
V
(T
A
=
‒
40 to +85
°
C, 1.8 V
≤
V
DD
≤
3.6 V, V
SS
= 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
System clock frequency
f
CLK
1.8 V
≤
V
DD
≤
3.6 V
1
32
MHz
Number of code flash rewrites
C
erwr
Retained for 20 years
T
A
= 85
°
C
1,000
Times
Number of data flash rewrites
Retained for 1 year
T
A
= 25
°
C
1,000,000
Retained for 5 years
T
A
= 85
°
C
100,000
Retained for 20 years
T
A
= 85
°
C
10,000
(T
A
= -40 to +85
°
C, 1.8 V
DD
≤
3.6 V, V
SS
= 0 V)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Transfer rate
During serial programming
115,200
1,000,000
bps
V
DD
STOP instruction execution
Standby release signal
(interrupt request)
STOP mode
RAM data retention
Operation mode
V
DDDR
Содержание RL78/G1H
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