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innovative
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Ossila Ltd
Copyright © 2009-2015
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The transfer characteristic and transistor figures of merits (mobility, threshold voltage, etc.) are
stored in a single ‘overview’ excel file, one per substrate. Conversely, the output and ancillary
transfer data (such as linear fit, upper/lower fit bounds etc.) are saved on separate .csv files, one per
device.
Continuous Measurement:
multiple measurement cycles of the selected devices executed
consecutively or intermittently for a protracted period of time. Continuous measurement is designed
for gathering lifetime data on the device performance over a user-defined period of time, whose
duration can be, at the most, infinite. The transistor figures of merit are stored as time series on a
single .csv file per device.
Combine Measurement Modes
: The user can combine bias acquisition with continuous
measurement in order to carry out lifetime experiments with the devices kept at a constant voltage
bias between two consecutive acquisitions.
A Brief Introduction to Field Effect Transistors
A Field Effect Transistor (FET) is a three-terminal device where the source-drain current I
DS
is
controlled by the electrical field applied to the semiconductor through the gate dielectric. The gate
field V
GS
induces a charge separation within the semiconductor layers closest to the dielectric, with
these
field-effect
induced charges acting as a conductive channel connecting the source with drain.
The minimum gate voltage required to form the drain-source channel is the
threshold voltage
V
Th
(see figure 13.)
