CHAPTER 18 FLASH MEMORY
User’s Manual U13850EJ4V0UM
424
(b) Area erase
Erasure can be performed in area units (there are two 128 KB unit areas). The erasing time is 2.0 s for each
area.
Area 0:
The area of xx000000H to xx01FFFFH (128 KB) is erased
Area 1:
The area of xx020000H to xx03FFFFH (128 KB) is erased
(2) V850/SB1 (
µµµµ
PD70F3032A, 70F3032AY), V850/SB2 (
µµµµ
PD70F3037A, 70F3037AY)
The erasing units for 512 KB flash memory versions are shown below.
(a) All area one-shot erase
The area of xx000000H to xx07FFFFH can be erased in one shot. The erasing time is 8.0 s.
(b) Area erase
Erasure can be performed in area units (there are four 128 KB unit areas). The erasing time is 2.0 s for each
area.
Area 0:
The area of xx000000H to xx01FFFFH (128 KB) is erased
Area 1:
The area of xx020000H to xx03FFFFH (128 KB) is erased
Area 2:
The area of xx040000H to xx05FFFFH (128 KB) is erased
Area 3:
The area of xx060000H to xx07FFFFH (128 KB) is erased
18.1.2 Write/read time
The write/read time is shown below.
Write time: 50
µ
s/byte
Read time: 50 ns (cycle time)
18.2 Writing with Flash Programmer
Writing can be performed either on-board or off-board with the dedicated flash programmer.
(1) On-board programming
The contents of the flash memory are rewritten after the V850/SB1 or V850/SB2 is mounted on the target
system. Mount connectors, etc., on the target system to connect the dedicated flash programmer.
(2) Off-board programming
Writing to a flash memory are performed by the dedicated program adapter (FA Series), etc., before mounting
the V850/SB1 or V850/SB2 on the target system.
Remark
FA Series is a product of NAITO DENSEI MACHIDA MFG. Co., Ltd.
Содержание MPD703030A
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