User’s Manual U13850EJ4V0UM
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CHAPTER 18 FLASH MEMORY
The following products are the flash memory versions of the V850/SB1 and V850/SB2.
Caution The flash memory version and mask ROM version differ in noise immunity and noise radiation.
If replacing a flash memory version with a mask ROM version when changing from of
experimental production to mass production, make a thorough evaluation by using the CS
model (not ES model) of the mask ROM version.
(1) V850/SB1
µ
PD70F3033A, 70F3033AY: 256 KB flash memory versions
µ
PD70F3032A, 70F3032AY: 512 KB flash memory versions
(2) V850/SB2
µ
PD70F3035A, 70F3035AY: 256 KB flash memory versions
µ
PD70F3037A, 70F3037AY: 512 KB flash memory versions
In the instruction fetch to this flash memory, 4 bytes can be accessed by a single clock, the same as in the mask
ROM version.
Writing to flash memory can be performed with memory mounted on the target system (on board). The dedicated
flash programmer is connected to the target system to perform writing.
The following can be considered as the development environment and the applications using a flash memory.
• Software can be altered after the V850/SB1 or V850/SB2 is solder-mounted on the target system.
• Small scale production of various models is made easier by differentiating software.
• Data adjustment in starting mass production is made easier.
18.1 Features
• 4-byte/1-clock access (in instruction fetch access)
• All area one-shot erase/area unit erase
• Communication via serial interface with the dedicated flash programmer
• Erase/write voltage: V
PP
= 7.8 V
• On-board programming
• Flash memory programming in area (128 KB) units by self-writing
18.1.1 Erasing unit
The erasing unit differs depending on the product.
(1) V850/SB1 (
µµµµ
PD70F3033A, 70F3033AY), V850/SB2 (
µµµµ
PD70F3035A, 70F3035AY)
The erasing units for 256 KB flash memory versions are shown below.
(a) All area one-shot erase
The area of xx000000H to xx03FFFFH can be erased in one shot. The erasing time is 4.0 s.
Содержание MPD703030A
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