KEPCO BOP 1000W, Руководство оператора

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BOP HIPWR 080709
3-53
The LIST subsystem includes a subsystem for waveform generation. The waveform generation
is invoked with the verb APPLY. When APPLY is added to a list:volt or list:curr command, the
BOP adds a series of points to the list arrays. The BOP can apply these points to approximate a
SINE, Triangle, RAMP (positive or negative) or square waveform or a level. The basic command
requires a type, frequency (or period for a level), a peak-to-peak amplitude (or amplitude for a
level).and offset (offset not needed for a level) The unit will create an appropriate number of
points in both the dwell and output control array to create the waveform centered on zero volts.
An optional offset can be added to the command to cause the BOP to generate a non-centered
waveform. For example, a 5 volt 400 Hertz sine wave may be centered at -3 volts. The list sub-
system has controls the allow the user to modify the unit's behavior to generate parts of wave-
forms and to used specific dwell times as appropriate. The APPLY subsystem accommodates
126 different segments in a single waveform provided the generated points fit in the array. See
paragraph 3.3.9.3 for an explanation of how a waveform is generated by the BOP.
3.6.3.5 MEASURE SUBSYSTEM
This query subsystem returns the voltage and current measured at the power supply's output
terminals.
3.6.3.6 OUTPUT SUBSYSTEM
This subsystem controls the power supply's voltage and current outputs
3.6.3.7 MEMORY SUBSYSTEM
This subsystem controls the Flash Memory used by the BOP microprocessors and is used for
storing setup parameters and for storing a list for later recall and execution
The unit’s configuration, voltage and current, saved setups (*SAV and *RCL command) and Cal-
ibration values are stored in Flash Memory. Since the Flash EEPROM cannot be modified by
writing a single data byte, the block must be erased and then the data written into the correct
locations.
Saved setups are accomplished by the 99 memory locations (groups of settings) which are
stored in the nonvolatile memory. Each setting contains values for: Mode, main channel setting
(voltage or current), Reference setting, positive and negative protect values, External Protect
setting (see Table 3-18), and the keypad state (locked/unlocked. If the keypad is locked
(SYST:KEYB DISable), the *SAV command creates a protected setting that can not be altered
from the front panel.
The BOP accomplishes this by partitioning the Flash memory. As the amount of Flash memory
used becomes larger with each subsequent data update, the Flash memory fills up and needs
to be compressed. The compression of the Flash EEPROM, called packing, is automatically
handled by the BOP microprocessor's code. The packing process can take a half a second to
accomplish Because it is automatically executed, it can occur after any *SAV or save of Calibra-
tion. When the memory is out of space, the internal microprocessor moves the any data in the
first page to the end of the flash array and then erases the first flash page. The pack process
can take 500 milliseconds to complete. Packing is automatically invoked during power up initial-
ization if the BOP finds that any storage area is over 90% utilized.
The following statistics are a guide as to when a MEMORY PACK will occur.
• Save area - Approximately 300 *SAV operations can be completed before a PACK will
occur automatically.